This study presents a high-performance silicon nanowire (SiNW) array biosensor for the combined detection of two key colorectal cancer (CRC) biomarkers: circulating tumor DNA (ctDNA) and carcinoembryonic antigen (CEA). The device was fabricated using conventional micromachining techniques, enabling the integration of dual SiNW arrays on a single chip with precise control over structure and surface functionalization. Specific probe DNA and anti-CEA antibodies were immobilized on distinct array regions to facilitate targeted binding. The biosensor demonstrated exceptional performance, achieving an ultralow detection limit of 10 aM for ctDNA with a linear range from 0.1 fM to 10 pM, and a sensitivity of 1 fg/mL for CEA. It exhibited high selectivity against interfering substances, including single-base mismatched DNA and non-specific proteins, and maintained robust performance in human serum samples. The platform offers a scalable, label-free, and real-time detection solution with significant potential for application in early CRC screening and personalized medicine.

Chronic hepatitis B poses a serious threat to human health and life, and early diagnosis is essential to improving patient cure rates. Hepatitis B virus (HBV) and Alpha-fetoprotein (AFP) are two key biomarkers for diagnosing chronic hepatitis B. In this study, we propose a silicon nanowire array field effect transistor (SiNW-array FET) biosensor that enables highly sensitive, real-time, and low-cost joint detection of both HBV and AFP. The SiNW-array FET is fabricated using traditional micro-nano fabrication techniques such as self-limiting oxidation and anisotropic etching, and its morphology and electrical properties were tested. The results show that the diameters of the fabricated silicon nanowires (SiNWs) are uniform and the SiNW-array FET exhibits a strong output signal and high signal-to-noise ratio. Through specific chemical modification on the surface of SiNWs, the SiNW-array FET is highly sensitive and specific to HBV-DNA fragments and AFP, with ultralow detection limits of 0.1 fM (HBV-DNA) and 0.1 fg/mL (AFP). The detection curve of the SiNW-array FET exhibits good linearity within the HBV-DNA concentration range of 0.1 fM to 100 pM and AFP concentration range of 0.1 fg/mL to 1000 pg/mL. More importantly, the device could also detect HBV-DNA successfully in serum samples, laying a solid foundation for the highly sensitive clinical detection of chronic hepatitis B.

In this article, we propose a novel natural light detector based on high-performance silicon nanowire (SiNW) arrays. We achieved a highly controllable and low-cost fabrication of SiNW natural light detectors by using only a conventional micromachined CMOS process. The high activity of SiNWs leads to the poor long-term stability of the SiNW device, and for this reason, we have designed a fully wrapped structure for SiNWs. SiNWs are wrapped in transparent silicon nitride and silicon oxide films, which greatly improves the long-term stability of the detector; at the same time, this structure protects the SiNWs from breakage. In addition, the SiNW arrays are regularly distributed on the top of the detector, which can quickly respond to natural light. The response time of the detector is about 0.015 s. Under the illumination of 1 W·m⁻² light intensity, multiple SiNWs were detected together. The signal strength of the detector reached 1.82 μA, the signal-to-noise ratio was 47.6 dB, and the power consumption was only 0.91 μW. The high-intensity and highly reliable initial signal reduces the cost and complexity of the backend signal processing circuit. A low-cost and high-performance STM32 microcontroller can realize the signal processing task. Therefore, we built a high-performance SiNW natural optoelectronic detection system based on an STM32 microcontroller, which achieved the real-time detection of natural light intensity, with an accuracy of ±0.1 W·m⁻². These excellent test performances indicate that the SiNW array natural light detector in this article meey the requirements of practicality and has broad potential for application.

Silicon nanowire (SiNW) photodetectors exhibit high sensitivity for natural light detection but suffer from significant performance degradation due to thermal interference. To overcome this limitation, this paper presents a high-performance, CMOS-compatible SiNW array natural light photodetector with monolithic integration of an on-chip temperature sensor and an embedded intelligent compensation system. The device, fabricated via microfabrication techniques, features a dual-array architecture that enables simultaneous acquisition of optical and thermal signals, thereby simplifying peripheral circuitry. To achieve high-precision decoupling of the optical and thermal signals, we propose a hybrid temperature compensation algorithm that combines Particle Swarm Optimization (PSO) with a Back Propagation (BP) neural network. The PSO algorithm optimizes the initial weights and thresholds of the BP network, effectively preventing the network from getting trapped in local minima and accelerating the training process. Experimental results demonstrate that the proposed PSO-BP model achieves superior compensation accuracy and a significantly faster convergence rate compared to the traditional BP network. Furthermore, the optimized model was successfully implemented on an STM32 microcontroller. This embedded implementation validates the feasibility of real-time, high-accuracy temperature compensation, significantly enhancing the stability and reliability of the photodetector across a wide temperature range. This work provides a viable strategy for developing highly stable and integrated optical sensing systems.

Following publication, we noted that the sequence of the corresponding authors and their email addresses was incorrectly listed in the original publication, and a correction is required