The direct photopatterning technique provides a straightforward approach for high-resolution quantum dot (QD) patterns for next-generation displays. However, the extensively deteriorated QD optical properties deriving from the changes of the QD surface states and/or surroundings set substantial limitations in obtaining high-quality QD patterns and efficient electroluminescent devices. Here, we propose an ingenious and effective approach by utilizing the photoisomeric transformation from spiropyran to merocyanine for highly emissive QD patterns. We reveal the suppression of non-radiative energy transfer between QDs and the dissociative merocyanine for fast luminescence recovery. We achieve small-sized (0.8 μm), high-resolution (15,800 pixels per inch, PPI), high-fidelity (~100%), multicolor, and elaborated QD pixels, and showcase their good compatibility for CdSe/ZnS and perovskite QD pixel fabrication, as well as on both rigid and flexible substrates. These merits promote highly performing pixelated devices with a large luminance of 35,534 cd m ^{− 2} and a record efficiency of 24.5% at 6350 PPI among the direct photopatterning devices. Furthermore, we verify the wide applicability of the proposed strategy for high-performance pixelated perovskite devices with an efficiency of 13.8% at 1760 PPI. The above results confirm the great value of the proposed approach for high-quality QD patterns and high-performance pixelated devices.

Perovskite quantum dots (PQDs) based on CsPbX₃ (X = Cl, Br, I) have attracted extensive attention due to their outstanding optoelectronic properties; however, their practical applications are hindered by poor environmental stability. In this work, a sequential surface-modification strategy is developed to address these limitations. First, CsPbBr₃ PQDs are passivated with (3-aminopropyl) triethoxysilane (APTES), which reduces surface defects and enhances the photoluminescence quantum yield (PLQY) from 38.5% to 74.4%. Subsequently, a dense silica shell is constructed via in situ hydrolysis of tetramethyl orthosilicate (TMOS), further improving the PLQY to 95.6% and significantly boosting environmental stability. Structural and optical characterizations confirm effective defect passivation and suppress non-radiative recombination, with carrier lifetimes extended from 2.5 ns to 36.9 ns. Remarkably, the silica-coated PQDs retain over 50% of their initial emission intensity after 100 min of water immersion, far exceeding the stability of uncoated counterparts. Furthermore, when integrated with a commercial K₂SiF₆: Mn⁴⁺ red phosphor and a blue light-emitting diode (LED) chip, the resulting white LED (WLED) exhibits a wide color gamut covering 104% of the National Television System Committee (NTSC) standard and Commission Internationale de l’Éclairage (CIE) coordinates of (0.323, 0.331), closely matching standard white light. Importantly, only the silica-coated PQDs maintain a stable electrically driven device emission spectrum after water exposure.

This paper proposes a novel patterning method using DPPA to form a UV-responsive self-assembled monolayer (SAM) on ZnO surfaces for patterning quantum dot (QD) luminescent films. Damage-free high-resolution QD pixels with 1797 PPI were successfully fabricated, fully verifying the feasibility of this approach for high-precision QD patterning. Furthermore, when integrated into the QLED fabrication process, devices with fully exposed DPPA-based SAM achieved a maximum external quantum efficiency (EQE) of 6.25%. This breakthrough lays a solid experimental and technical foundation for future research and applications of this method.