In this study, the effects of variations in the height ($h$) and bottom radius ($r$) of black silicon microstructures on their absorptance and photoelectric response efficiency were analyzed. By using the relation $\cot {\displaystyle \frac{\theta }{2}}={\displaystyle \frac{h}{r}}$ to combine the parameters, it was found that changes in morphology affected the absorptance of black silicon microstructures, with $h$ being directly proportional to the absorptance, while $r$ was inversely proportional. A positive correlation was observed between $\cot {\displaystyle \frac{\theta }{2}}$ and absorptance. However, the correlation between $\cot {\displaystyle \frac{\theta }{2}}$ and photoelectric response efficiency was not significant. Through Raman spectroscopy analysis of the samples, it was concluded that as the laser ablation energy density increased, more lattice defects were introduced, weakening the charge carrier transport efficiency. This study further elucidated the mechanism by which microstructural changes impacted the absorptance and energy density of black silicon, providing valuable insights for optimizing its energy density.