Shun Yuan

Mr. Shun Yuan

orcid

Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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26 April 2024 in Aerospace
Verified
Journal Article
Open access
PDF file
ZMZhenyang Ma
Zhenyang Ma
DLDexu Liu
Dexu Liu
SYShun Yuan
Shun Yuan
ZDZhaobin Duan
Zhaobin Duan
ZWZhijun Wu
Zhijun Wu
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

30 December 2024 in Aerospace
Verified
Journal Article
Open access
PDF file
JBJie Bai
Jie Bai
SYShun Yuan
Shun Yuan
ZDZhaobin Duan
Zhaobin Duan
The 5G frequency band is extremely close to the operating frequency band of radio altimeters (RAs), so an in-depth study of the possible interference of 5G’s key parameters on RAs is especially necessary to ensure aviation safety. In this paper, the interference magnitude of 5G waveforms on an altimeter was measured by simulating the Adjacent Channel Leakage Power Ratio (ACLR) values for different sub-carrier spacing (SCS) and channel bandwidth configurations. Furthermore, interference injection experiments on simulated 5G signals and the interference thresholds of a frequency-modulated continuous wave (FMCW) altimeter were compared to experiments on the effects of the different configurations of 5G SCSs, channel bandwidths, and center frequency points. The interference thresholds of this FMCW altimeter were found to be in the range of 1 dBm to 6 dBm and −4 dBm to 0 dBm under the interference of 5G signals at the center frequency points of 3.7 GHz and 3.9 GHz. These results provided a certain reference for the engineering judgement margin of the interference thresholds.

5 April 2024 in Sensors
Verified
Journal Article
Open access
PDF file
ZDZhaobin Duan
Zhaobin Duan
ZMZhenyang Ma
Zhenyang Ma
JBJie Bai
Jie Bai
PWPeng Wang
Peng Wang
KXKe Xu
Ke Xu
SYShun Yuan
Shun Yuan
In this manuscript, we present a novel deployment protection method aimed at safeguarding aeronautical radio altimeters (RAs) from interference caused by fifth-generation (5G) telecommunication base stations (BSs). Our methodology involves an integrated interference model for defining prohibited zones and utilizes power control and angle shutoff methods to mitigate interference. First, to ensure reliable protection, we define both horizontal and vertical prohibited zones and investigate their variations to immunize RA against 5G interference. Second, we validate the effectiveness of the model in various operational scenarios, analyzing the influence of factors such as base station types, antenna parameters, flight altitude, and aircraft attitudes to cover a wide range of real-world scenarios. Third, to mitigate interference, we propose and analyze the power control and angle shutoff methods through simulation for the RMa prohibited zone. Our results demonstrate the efficacy of the deployment protection method in safeguarding RAs from 5G interference, providing guidance for interference protection during civil aviation operations and base station deployment near airports.