InAlN semiconductor alloy is a promising option for the fabrication of optoelectronic devices, such as high efficiency solar cells, due to its wide variable bandgap, from 0.64 eV to 6.2 eV. Traditionally, the production of high quality InAlN has been achieved by techniques such as MBE (Molecular Beam Epitaxy) and MOCVD (Chemical Vapor Deposition), which are complex and require high energy consumption. In contrast, sputtering is presented as a simpler, cheaper, and more industrially scalable technique, allowing the production of InAlN thin films with good structural quality. This study investigates the physical properties of InAlN layers to evaluate their potential in photovoltaic applications. Recent advances and challenges in the use of InAlN as an absorber layer in solar cells are discussed. In addition, critical parameters of the sputtering process, including target power, working pressure, gas flow ratio, substrate temperature, source type and number of cathodes and their influence on material properties are explored. These conditions are discussed along with their impact on the quality of InAlN thin films to enhance their application in photovoltaics and other emerging technology areas.

This study presents an innovative method for the synthesis of indium aluminum nitride (InAlN) layers by direct current (DC) co-sputtering at room temperature, with the aim of reducing production costs of optoelectronic devices. Indium and aluminum targets are used, varying the power applied to the aluminum target. The results show that increasing the target power favors the formation of aluminum nitride (AlN), which modifies the chemical composition of the material. The layers obtained present smooth surfaces with a roughness of less than 3 nm, which is beneficial for applications requiring interfaces with low defect density. Regarding the optical properties, it is observed that the optical bandgap varies between 1.8 eV and 2.0 eV, increasing with the target power. Hall effect measurements indicate a decrease in the free carrier concentration and an increase in the resistivity with increasing power. This approach allows for the synthesis of InAlN with properties suitable for optoelectronic applications, solar cells, photocatalysis, and photoelectrocatalysis at low cost.

The study addresses the fabrication of indium aluminum nitride (InAlN) layers by DC co-sputtering at room temperature, highlighting their potential in optoelectronic and solar cell applications. Experiments were carried out with different powers for the aluminum target, observing changes in the stoichiometry and material properties. XPS and AES analysis confirmed the variation in indium and aluminum concentration, directly affecting bandgap and electrical properties such as mobility and free carrier concentration. The layers showed smooth surfaces with low roughness, suitable for high efficiency interfaces. This method promises to reduce costs and improve the accessibility of efficient solar technologies based on InAlN semiconductor alloy.