Fangpei Li

Fangpei Li


Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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6 December 2024 in Journal of Materials Chemistry A
Verified
Journal Article
Closed access
PDF file
JTJia Tian
Jia Tian
YHYue He
Yue He
FLFangpei Li
Fangpei Li
Wenbo PengWenbo Peng
Wenbo Peng
YHYongning He
Yongning He
This review summarizes the mechanisms, regulations, influencing factors, and application prospects of contact electrification at different interfaces.

9 October 2024 in Micromachines
Verified
Journal Article
Open access
PDF file
ZYZixia Yu
Zixia Yu
YYYongqing Yue
Yongqing Yue
ZLZhaozhao Liang
Zhaozhao Liang
Xiaolong ZhaoXiaolong Zhao
Xiaolong Zhao
FLFangpei Li
Fangpei Li
YHYongning He
Yongning He
A Lamb wave is a guided wave that propagates within plate-like structures, with its vibration mode resulting from the coupling of a longitudinal wave and a shear vertical wave, which can be applied in sensors, filters, and frequency control devices. The working principle of Lamb wave sensors relies on the excitation and propagation of this guided wave within piezoelectric material. Lamb wave sensors exhibit significant advantages in various sensing applications due to their unique wave characteristics and design flexibility. Compared to traditional surface acoustic wave (SAW) and bulk acoustic wave (BAW) sensors, Lamb wave sensors can not only achieve higher frequencies and quality factors in smaller dimensions but also exhibit superior integration and multifunctionality. In this paper, we briefly introduce Lamb wave sensors, summarizing methods for enhancing their sensitivity through optimizing electrode configurations and adjusting piezoelectric thin plate structures. Furthermore, this paper systematically explores the development of Lamb wave sensors in various sensing applications and provides new insights into their future development.

5 December 2024 in Sensors
Verified
Journal Article
Open access
YYYongqing Yue
Yongqing Yue
ZYZixia Yu
Zixia Yu
FLFangpei Li
Fangpei Li
Wenbo PengWenbo Peng
Wenbo Peng
QZQuanzhe Zhu
Quanzhe Zhu
YHYongning He
Yongning He
Neuromorphic computing, inspired by the brain, holds significant promise for advancing artificial intelligence. Artificial optoelectronic synapses, which can convert optical signals into electrical signals, play a crucial role in neuromorphic computing. In this study, we successfully fabricated a flexible artificial optoelectronic synapse device based on the ZnO/PDMS structure by utilizing the magnetron sputtering technique to deposit the ZnO film on a flexible substrate. Under UV light illumination, the device exhibits excellent synaptic plasticity, including excitatory postsynaptic current (EPSC), short-term potentiation (STP), and paired-pulse facilitation (PPF). By growing ZnO nanowires, we improved the fabrication processes and further enhanced the synaptic properties of the device, demonstrating long-term potentiation (LTP) and the transition from short-term memory (STM) to long-term memory (LTM). Additionally, the device exhibits outstanding flexibility, maintaining stable synaptic plasticity under bending conditions. This device shows broad application potential in mimicking visual systems and is expected to contribute significantly to the development of neuromorphic computing.

22 December 2024 in Sensors
Verified
Journal Article
Open access
PDF file
ZZZhen Zhang
Zhen Zhang
FLFangpei Li
Fangpei Li
Wenbo PengWenbo Peng
Wenbo Peng
QZQuanzhe Zhu
Quanzhe Zhu
YHYongning He
Yongning He
The combination of ZnO with narrow bandgap materials such as CuO is now a common method to synthesize high-performance optoelectronic devices. This study focuses on optimizing the performance of p-CuO/n-ZnO heterojunction pyroelectric photodetectors, fabricated through magnetron sputtering, by leveraging the pyro-phototronic effect. The devices’ photoresponse to UV (365 nm) and visible (405 nm) lasers is thoroughly examined. The results show that when the device performance is regulated by adjusting the three parameters—sputtering power, sputtering time, and sputtering oxygen–argon ratio—the optimal sputtering parameters should be as follows: sputtering power of 120 W, sputtering time of 15 min, and sputtering oxygen–argon ratio of 1:3. With the optimal sputtering parameters, the maximum responsivity of the pyroelectric effect and the traditional photovoltaic effect Rpyro+photo of the detector is 4.7 times that under the basic parameters, and the maximum responsivity of the traditional photovoltaic effect Rphoto is also 5.9 times that under the basic parameters. This study not only showcases the extensive potential of the pyro-phototronic effect in enhancing heterojunction photodetectors for high-performance photodetection but also provides some ideas for fabricating high-performance photodetectors.

1 January 2025 in AIMS Materials Science
Verified
Journal Article
Open access
PDF file
JTJia Tian
Jia Tian
YHYue He
Yue He
FLFangpei Li
Fangpei Li
Wenbo PengWenbo Peng
Wenbo Peng
YHYongning He
Yongning He
The triboelectric nanogenerator (TENG), as a new energy harvesting device, can efficiently harvest mechanical energy from the environment to provide continuous power for electronic devices, which has great potential for powering intelligent distributed network. Laser processing technology, which enables structural, phase, and property control at different scales, can quickly and easily complete the surface patterning of TENG and facilitate efficient energy harvesting. In this work, we outline the working modes and principles of TENG, review the research progress of laser surface processing technology for fabricating TENG in recent years, including laser-induced graphene (LIG), laser ablation, laser carbonization, laser-induced copper, etc., and perspectives on the challenges and future directions for development of laser surface processing for performance enhancement of TENG.

10 July 2024 in Nano Energy
Verified
Journal Article
Closed access
WXWanli Xie
Wanli Xie
FLFangpei Li
Fangpei Li
Wenbo PengWenbo Peng
Wenbo Peng
YWYitong Wang
Yitong Wang
XZXiaolong Zhao
Xiaolong Zhao
YHYongning He
Yongning He