In recent years, location-based services have been receiving increasing attention because of their great development prospects. Researchers from all over the world have proposed many solutions for indoor positioning over the past several years. However, owing to the dynamic and complex nature of indoor environments, accurately and efficiently localising targets in indoor environments remains a challenging problem. In this paper, we propose a novel indoor positioning algorithm based on the received signal strength indication and pedestrian dead reckoning. In order to enhance the accuracy and reliability of our proposed probabilistic position selection algorithm in mixed line-of-sight (LOS) and non-line-of-sight (NLOS) environments, a low-complexity identification approach is proposed to identify the change in the channel situation between NLOS and LOS. Numerical experiment results indicate that our proposed algorithm has a higher accuracy and is less impacted by NLOS errors than other conventional methods in mixed LOS and NLOS indoor environments.

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.

It is well known that multipath is one of the main sources of errors in GPS static high precision positioning of short baselines. Most algorithms for reducing multipath manipulate the GPS double difference (DD) observation residuals as input signal in GPS signal processing. In the traditional multipath mitigation methods, applying the wavelet transform (WT) to decompose the GPS DD observation residuals for identifying the multipath disturbance cannot effectively filter out the white noise of the high frequency part of the signal, and it is prone to edge effect. In this paper, for extracting multipath, a wavelet packet algorithm based on two-dimensional moving weighted average processing (WP-TD) is proposed. This algorithm can not only effectively filter out the white noise of the high frequency part of the signal, but also weaken the influence of the edge effect. Furthermore, considering the repeatability of multipath error in static positioning, we propose a method for determining the level of wavelet packet decomposition layers which make multipath extraction more effectively. The experimental results show that the corrected positioning accuracy is 14.14% higher than that of the traditional wavelet transform when applying the obtained multipath to DD coordinate sequences for position correction.

This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. Furthermore, the electrical characteristics were optimised using Synopsys Sentaurus technology computer-aided design (TCAD). The GAS GAA TFET contains a combination of around-source germanium and silicon, which have different bandgaps. With an increase in the gate-source voltage, band-to-band tunnelling (BTBT) in silicon rapidly approached saturation since germanium has a higher BTBT probability than silicon. At this moment, germanium could still supply current increment, resulting in a steady and steep average subthreshold swing $\left(S{S}_{\mathrm{AVG}}\right)$ and a higher ON-state current. The GAS GAA TFET was optimised through work function and drain overlapping engineering. The optimised GAS GAA TFET exhibited a high ON-state current ( $I_{\mathrm{ON}}$ ) (11.9 $\mathsf{\mu }$ A), a low OFF-state current ( $I_{\mathrm{OFF}}$ ) ( $2.85\times {10}^{-9}$ $\mathsf{\mu }$ A), and a low and steady $S{S}_{\mathrm{AVG}}$ (57.29 mV/decade), with the OFF-state current increasing by ${10}^7$ times. The GAS GAA TFET has high potential for use in low-power applications.