A new model for numerical analysis of partially coherent x-ray at synchrotron beamlines is presented. The model is based on statistical optics. Four-dimensional coherence function, Mutual Optical Intensity (MOI), is applied to describe the wavefront of the partially coherent light. The propagation of MOI through optical elements in the beamline is deduced with numerical calculation. The coherence of x-ray through beamlines can be acquired. We applied the model to analyze the coherence in the STXM beamline at SSRF, and got the coherence length of the beam at the endstation. To verify the theoretical results, the diffraction experiment of a single slit was performed and the diffraction pattern was simulated to get the coherence length, (31 ± 3.0) µm × (25 ± 2.1) µm (H × V), which had a good agreement with the theoretical results, (30.7 ± 0.6) µm × (31 ± 5.3) µm (H × V). The model is applicable to analyze the coherence in synchrotron beamlines.
26 February 2020 in International Journal of Extreme Manufacturing
This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on.
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