Following Vision 2040, Oman seeks to achieve economic diversification and environmental sustainability. In this context, the world’s quest of going electric brings along opportunities as well as challenges. This study aims at determining the key barriers and facilitators of EV adoption in the country. This study examines factors such as consumer acceptance, engagement, and safe driving in relation to EVs, with a specific focus on Oman. To establish what Omani clients prefer, what worries them most, and whether they would consider making the switch to electric vehicles, empirical data on a sufficiently representative number of Omani clients were collected through a survey. According to the responses, 55% of the participants reported that they would be willing to think about purchasing an electric vehicle (EV) for their next car, which suggests a somewhat moderate level of consumer acceptance. Adoption is hindered primarily by concerns about the reliability of batteries in extreme weather conditions, high purchase prices, fear of running out of charge, and lack of sufficient charging stations. Most of the EV drivers appreciate the calm and ease of driving an electric vehicle. As the report states, certain actions must be taken, including creating public awareness through educational programs and campaigns, providing government subsidies or financial incentives, and creating the necessary infrastructure for charging equipment. To address these issues and quicken the pace of Oman’s transition to electric vehicles, this calls for collaboration among policymakers, car manufacturers, and transport planners. Aside from offering actionable recommendations regarding eco-friendly means of transport in Oman, which is relevant to the acceptance of electric vehicles in the country, this research also enhances the understanding of the issues related to the acceptance of electric vehicles in the country.

Graphene Nano-Sheet Field Effect Transistor (GNSFET) is designed using a new material (graphene) in the channel, marking advancement in Nano-Sheet Field Effect Transistor (NSFET) technology. The device’s analog/Radio Frequency (RF) performance are evaluated with respect to the main geometric parameters of GNSFET, such as the gate-length, the channel-width, and the channel- thickness. Key analog/RF performance metrics, including the following: ION/IOFF ratio, subthreshold-swing SS, transconductance gm, transconductance efficiency gm/Id, output conductance gds, gate capacitance Cgg, cut-off frequency FT, and intrinsic gain Av. Output results reveal that scaling-down Tch to 6 nm, Wch to 14 nm, and Lg to 16 nm enhances the ION/IOFF ratio to 5.2×1011 and reduces SS to 60.05 mV/dec, which creates better switching efficiency. Reducing Tch from 8 nm to 6 nm, and Wch from 18 nm to 12 nm boosts the ION/IOFF ratio by 34.48% and 33.19%, respectively, highlighting the main role of device’s small geometry in improving electrostatic control. Transconductance gm increases by 22.51% when Lg is scaled from 16 nm to 12 nm, while Cgg decreases with reductions in Lg, Wch, and Tch, aligning with graphene’s inherent high carrier mobility. Notably, FT improves by 11.71% under Tch scaling, underscoring graphene’s potential for high-frequency RF applications. Although, intrinsic-gain (Av) benefits from Wch and Tch scaling, it exhibits a significant augmentation of 38.88% when Lg is increased from 12 nm to 16 nm, reflecting a trade-off between gain optimization and speed.