A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300–500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman $E_{1L}$ mode of ZnO, manifesting that Ga sites in ZnO are Zn sites $\left({\mathrm{Ga}}_{\mathrm{Zn}}\right)$ . The formation mechanism of ${\mathrm{Zn}}_{1-x}{\mathrm{Ga}}_x\mathrm{O}$ nanowires/ZnO heterostructures is proposed.

At the heart of ever growing demands for faster signal processing is ultrafast charge transport and control by electromagnetic fields in semiconductors. Intense optical fields have opened fascinating avenues for new phenomena and applications in solids. Because the period of optical fields is on the order of a femtosecond, the current switching and its control by an optical field may pave a way to petahertz optoelectronic devices. Lately, a reversible semimetallization in fused silica on a femtosecond time scale by using a few-cycle strong field (~1 V/Å) is manifested. The strong Wannier-Stark localization and Zener-type tunneling were expected to drive this ultrafast semimetallization. Wider spread of this technology demands better understanding of whether the strong field behavior is universally similar for different dielectrics. Here we employ a carrier-envelope-phase stabilized, few-cycle strong optical field to drive the semimetallization in sapphire, calcium fluoride and quartz and to compare this phenomenon and show its remarkable similarity between them. The similarity in response of these materials, despite the distinguishable differences in their physical properties, suggests the universality of the physical picture explained by the localization of Wannier-Stark states. Our results may blaze a trail to PHz-rate optoelectronics.

We have experimentally investigated the field- and fluence-dependent terahertz (THz) emission behaviors by a femtosecond optical pump in Co ferromagnetic films, together with the time-resolved magneto-optical Kerr effect measurement. The thickness of Co and Ta capping layers has been systematically varied. For thick films, THz emission behavior is found to be directly matched with the photoinduced ultrafast demagnetization and remagnetization dynamics. The angle-dependent THz emission measurement also confirms a direct relation between the THz emission and the photoinduced demagnetization/remagnetization dynamics in the case of thick films, while THz emission from the inverse spin Hall effect also plays a role in the case of thin Co films.

The effect of the mixing of pulsed two color fields on the generation of an isolated attosecond pulse has been systematically investigated. One main color is 800 nm and the other color (or secondary color) is varied from 1.2 to 2.4µm. This work shows that the continuum length behaves in a similar way to the behavior of the difference in the square of the amplitude of the strongest and next strongest cycle. As the mixing ratio is increased, the optimal wavelength for the extended continuum shifts toward shorter wavelength side. There is a certain mixing ratio of intensities at which the continuum length bifurcates, i.e., the existence of two optimal wavelengths. As the mixing ratio is further increased, each branch bifurcates again into two sub-branches. This 2D map analysis of the mixing ratio and the wavelength of the secondary field easily allows one to select a proper wavelength and the mixing ratio for a given pulse duration of the primary field. The study shows that an isolated sub-100 attosecond pulse can be generated mixing an 11 fs full-width-half-maximum (FWHM), 800 laser pulse with an 1840 nm FWHM pulse. Furthermore the result reveals that a 33 fs FWHM, 800 nm pulse can produce an isolated pulse below 200 as, when properly mixed.

We report a passively mode-locked fiber-based oscillator that has no internal dispersion-compensating gratings. This design, which we believe to be the first of its kind, produces $25\mathrm{nJ}$ pulses at $80\mathrm{MHz}$ with the pulses compressible to $150\mathrm{fs}$. The pulses appear to be self-similar and initial data imply that their energy is further scalable.

We demonstrate that a current can be induced and switched in a sub-femtosecond time-scale in an insulating calcium fluoride single crystal by an intense optical field. This measurement indicates that a sizable current can be generated and also controlled by an optical field in a dielectric medium, implying the capability of rapid current switching at a rate of optical frequency, PHz (10¹⁵ Hz), which is a couple of orders of magnitude higher than that of contemporary electronic signal processing. This demonstration may serve to facilitate the development of ultrafast devices in PHz frequency.