Different procedures for analysis of particle sizes by the X-ray diffraction method are compared by the example of nanoparticles of nickel and iron(3+) oxide (Fe2O3). A modified Warren-Averbach...

Group IV photonics is on its way to be integrated with electronic circuits, making information transfer and processing faster and more energy efficient. Light sources, a critical component of photonic integrated circuits, are still in development. Here, we compare multi-quantum-well (MQW) light-emitting diodes (LEDs) with ${\mathrm{Ge}}_{0.915}{\mathrm{Sn}}_{0.085}$ wells and ${\mathrm{Si}}_{0.1}{\mathrm{Ge}}_{0.8}{\mathrm{Sn}}_{0.1}$ barriers to a reference ${\mathrm{Ge}}_{0.915}{\mathrm{Sn}}_{0.085}$ homojunction LED. Material properties as well as band structure calculations are discussed, followed by optical investigations. Electroluminescence spectra acquired at various temperatures indicate effective carrier confinement for electrons and holes in the GeSn quantum wells and confirm the excellent performance of GeSn/SiGeSn MQW light emitters.