A tunable nanotip optical cavity controls hybrid quantum states of a single emitter at room temperature.

Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on $\mathrm{Si}{\mathrm{O}}_2$ and $\mathrm{Hf}{\mathrm{O}}_2$ surfaces using bis-(cyclopentadienyl)ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is $4.84\pm 0.1\mathrm{eV}$ on $\mathrm{Si}{\mathrm{O}}_2$ , and the effective work function is reduced on $\mathrm{Hf}{\mathrm{O}}_2$ ∕$\mathrm{Si}{\mathrm{O}}_2$ layers.

The photolysis of CH3Br is studied in the energy region of the A band between 4.94 and 5.76 eV using ion imaging. Velocity distributions for both the bromine-atom and methyl-radical photofragments are determined. Our results indicate that transitions to the 3Q0 and 3Q1 states dominate the absorption cross section and the partial cross section to each state is determined. The [Br*]/[Br] branching ratio is found to be strongly dependent on the excitation energy varying between 0.6 and 1.5. Both the bromine-atom and the methyl-radical translational energy distributions suggest that the vibrational distribution in the nascent CH3 is nonstatistical with appreciable excitation in the v2 umbrella mode. The lifetime of the A band is estimated at τ=120±40 fs.