The interplay between magnetism and superconductivity can lead to unconventional proximity and Josephson effects. A related phenomenon that has recently attracted considerable attention is the superconducting diode effect, in which a nonreciprocal critical current emerges. Although superconducting diodes based on superconductor/ferromagnet (S/F) bilayers were demonstrated more than a decade ago, the precise underlying mechanism remains unclear. While not formally linked to this effect, the Fulde–Ferrell–Larkin–Ovchinikov (FFLO) state is a plausible mechanism due to the twofold rotational symmetry breaking caused by the finite center-of-mass-momentum of the Cooper pairs. Here, we directly observe asymmetric vortex dynamics that uncover the mechanism behind the superconducting vortex diode effect in Nb/EuS (S/F) bilayers. Based on our nanoscale SQUID-on-tip (SOT) microscope and supported by in-situ transport measurements, we propose a theoretical model that captures our key results. The key conclusion of our model is that screening currents induced by the stray fields from the F layer are responsible for the measured nonreciprocal critical current. Thus, we determine the origin of the vortex diode effect, which builds a foundation for new device concepts.

Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. In this work, nano‐SQUID‐on‐tip (SOT) microscopy is used to obtain direct magnetic imaging of CrSBr flakes with thicknesses ranging from monolayer (N = 1) to few‐layer (N = 5). The ferromagnetic order is preserved down to the monolayer, while the antiferromagnetic coupling of the layers starts from the bilayer case. For odd layers, at zero applied magnetic field, the stray field resulting from the uncompensated layer is directly imaged. The progressive spin reorientation along the out‐of‐plane direction (hard axis) is also measured with a finite applied magnetic field, allowing evaluation of the anisotropy constant, which remains stable down to the monolayer and is close to the bulk value. Finally, by selecting the applied magnetic field protocol, the formation of Néel magnetic domain walls is observed down to the single‐layer limit.

CrGeTe₃ (CGT) is a semiconducting vdW ferromagnet shown to possess magnetism down to a two-layer thick sample. Although CGT is one of the leading candidates for spintronics devices, a comprehensive analysis of CGT thickness dependent magnetization is currently lacking. In this work, we employ scanning SQUID-on-tip (SOT) microscopy to resolve the magnetic properties of exfoliated CGT flakes at 4.2 K. Combining transport measurements of CGT/NbSe₂ samples with SOT images, we present the magnetic texture and hysteretic magnetism of CGT, thereby matching the global behavior of CGT to the domain structure extracted from local SOT magnetic imaging. Using this method, we provide a thickness dependent magnetization state diagram of bare CGT films. No zero-field magnetic memory was found for films thicker than 10 nm, and hard ferromagnetism was found below that critical thickness. Using scanning SOT microscopy, we identify a unique edge magnetism, contrasting the results attained in the CGT interior.

Exchange bias is a phenomenon critical to solid-state technologies that require spin valves or nonvolatile magnetic memory. The phenomenon is usually studied in the context of magnetic interfaces between antiferromagnets and ferromagnets, where the exchange field of the former acts as a means to pin the polarization of the latter. In the present study, we report an unusual instance of this phenomenon in the topological Weyl semimetal ${\mathrm{Co}}_3{\mathrm{Sn}}_2{\mathrm{S}}_2$, where the magnetic interfaces associated with domain walls suffice to bias the entire ferromagnetic bulk. Remarkably, our data suggest the presence of a hidden order parameter whose behavior can be independently tuned by applied magnetic fields. For micron-size samples, the domain walls are absent, and the exchange bias vanishes, suggesting the boundaries are a source of pinned uncompensated moment arising from the hidden order. This mechanism suggests that exciting opportunities lie ahead for the application of topological materials in spintronic technologies.