Optical power switches are essential components in fiber optic communication systems, requiring minimal losses, a broad operating wavelength range, and high tolerance to fabrication errors for optimal performance. Adiabatic optical power switches inherently meet these criteria and are well suited for manufacturing processes which support large-scale production at low costs. This paper presents the design and simulation of an adiabatic switch with a flat response in the whole 1525–1625 nm wavelength range (C band and L band) for both TE and TM polarizations. The switch is based on the thermo-optic effect induced by local variations in temperature. The impacts of the design parameters, such as the device length and dissipated heat, are analyzed. The simulation results indicate that the switch achieved high efficiency and low insertion losses, highlighting the potential of adiabatic switches for reliable and scalable integration into advanced optical circuits.

Waveguide-integrated electro-optical modulators play a crucial role in the design of new-generation photonic integrated circuits. The target of this paper is to demonstrate the potential offered by the association of graphene (Gr) and hydrogenated amorphous silicon (a-Si:H) in enhancing silicon photonics technology, enabling, in particular, the fabrication of efficient, wide-bandwidth, highly compact active devices. The design of the proposed electro-optic modulator is based on accurate numerical simulations where Gr is explored as the active material, absorbing (or not) the light propagating along the waveguide core, with its absorption coefficient being tunable through the application of an external electric bias. By strategically embedding two Gr monolayers where the propagating optical field is at its maximum, the performance of the modulator is maximized, resulting in a 39.5 GHz 3 dB bandwidth, corresponding to a 0.34 dB/µm modulation depth. The straightforward feasibility of the proposed structure is bolstered by the use of the Plasma-Enhanced Chemical Vapor Deposition technique, which allows for the deposition of a-Si:H on a silicon-on-insulator platform as a post-processing phase, ensuring potential scalability and practical implementation for advanced photonics.

Optical circulators are used in optical devices such as multiplexers, demultiplexers, and optical routers. Usually, the magnetic material in the center of the circulator conducts light by interacting with the electromagnetic wave. In this research, a polarization‐independent four‐port optical waveguide circulator with the presence of a rhombus‐shaped ferrimagnetic material has been designed, simulated, and optimized in the three‐dimensional part of Comsol software. This designed circulator unlike the previous structures has four ports which use the transmission matrix method to conduct waves. By selecting the appropriate size and type of central ferrite, as well as the scale of input and output channels, the most optimal situation is obtained for power transmission with less than 1 dB loss when port 1 is input and port 2 is output.

The demand for faster and more efficient optical communication systems has driven significant advancements in integrated photonic technologies, with optical switches playing a pivotal role in high-speed, low-latency data transmission. In this work, we introduce a novel design for an adiabatic optical switch based on the thermo-optic effect using silicon-on-insulator (SOI) technology. The approach relies on slow optical signal evolution, minimizing power dissipation and addressing challenges of traditional optical switches. Machine learning (ML) techniques were employed to optimize waveguide designs, ensuring polarization-independent (PI) and single-mode (SM) conditions. The proposed design achieves low-loss and high-performance operation across a broad wavelength range (1500–1600 nm). We demonstrate the effectiveness of a Y-junction adiabatic switch, with a tapered waveguide structure, and further enhance its performance by employing thermo-optic effects in hydrogenated amorphous silicon (a-Si:H). Our simulations reveal high extinction ratios (ERs) exceeding 30 dB for TE mode and 15 dB for TM mode, alongside significant improvements in coupling efficiency and reduced insertion loss. This design offers a promising solution for integrating efficient, low-energy optical switches into large-scale photonic circuits, making it suitable for next-generation communication and high-performance computing systems.

This paper presents a comprehensive simulation study on the design and simulation of an electro-optic ring switch utilizing graphene material. The switch employs the electrically Tunable Refractive Index by graphene to modulate the transmission characteristics within a ring resonator structure. By applying an electrical voltage ranging from -6 to -10V, significant changes are noticed in the output ports' transmission characteristics. In particular, the transmission through the output ports varies between 81% to 18% for output port n.1 and 21% to 83%for output port no.2, proving that signal propagation can be effectively controlled and manipulated. In addition to demonstrating the electro-absorption capabilities of graphene, this study explores the complex mechanics involved in the switching process. The relationship between the applied voltage and the optical characteristics of graphene is clarified by thorough simulations, providing insight into the switch's dynamic behavior. Furthermore, the efficiency, response time, and Electrical bandwidth of the device are discussed, offering a glimpse into its possible use in photonic integrated circuits and telecommunications. Overall, this study not only unveils the promising prospects of graphene-based electro-optic ring switches but also contributes to advancing the understanding of novel materials for next-generation photonic devices.

In this work, we present a graphene-based photodetector operating at a wavelength of 1310 nm. The device leverages the SPARK effect, which has previously been investigated only at 1550 nm. It features a hybrid waveguide structure comprising hydrogenated amorphous silicon, graphene, and crystalline silicon. Upon optical illumination, defect states release charge carriers into the graphene layer, modulating the thermionic current across the graphene/crystalline silicon Schottky junction. The photodetector demonstrates a peak responsivity of 0.3 A/W at 1310 nm, corresponding to a noise-equivalent power of 0.4 pW/Hz^1/2. The experimental results provide deeper insights into the SPARK effect by enabling the determination of the efficiency × lifetime product of carriers at 1310 nm and its comparison with values previously reported at 1550 nm. The wavelength dependence of this product is analyzed and discussed. Additionally, the response times of the device are measured and evaluated. The silicon-based fabrication approach employed is versatile and does not rely on sub-micron lithography techniques. Notably, reducing the incident optical power enhances the responsivity, making this photodetector highly suitable for power monitoring applications in integrated photonic circuits.