In this paper, we show a simple method of producing ferromagnetic materials with a Curie temperature above room temperature. The electron paramagnetic resonance (EPR) spectra of Cd_1−xCr_xTe (0.002 < x < 0.08) were measured with a dependence on temperature (82 K < T < 381 K). Obtained EPR lines were fitted to a Lorentz-shaped curve. The temperature dependencies of the parameters of the EPR lines, such as the peak-to-peak linewidth (H_pp), the intensity (A), as well as the resonance field (H_r), were studied. Ferromagnetism was noticed in samples at high temperatures (near room temperature). For a sample with a nominal concentration of chrome of x = 0.05, a very strong intrinsic magnetic field is observed. The value of the effective gyromagnetic factor for this sample is g_e = 30 at T = 240 K. An increase of chrome concentration above x = 0.05 reduces the ferromagnetic properties considerably. Analysis of the temperature dependencies of the integral intensity of EPR spectra was carried out using the Curie–Weiss law and the paramagnetic Curie temperature was obtained.

Temperature and gate voltage dependences of the 1/f noise in Hg_1−xCd_xTe and HgTe QW provide a strong argument for mobility fluctuations (δμ) as the dominant noise mechanism.

A review of the specificity of the growth Hg1-xCdxTe layers by molecular beam epitaxy (MBE) and results of experimental studies of several Hg1-xCdxTe layers grown on CdyZn1-yTe (CZT) substrates are presented. It is well known that the performance of Hg1-xCdxTe -based detectors strongly depends on the substrate material and its orientation. CZT substrates are among the most commonly used due to their very good lattice match with Hg1-xCdxTe absorber material with different Cd content. In the present work, the authors focused on optimizing the MBE growth parameters in order to obtain the best possible crystalline quality of Hg1-xCdxTe layers grown on CZT substrates with (211)B orientation, in particular in terms of minimizing the number of defects. Experimental results of the selected structures showed that the obtained undoped Hg1-xCdxTe layers of different x have high crystallographic and optical quality, as well as good surface morphology. In particular, high-resolution X-ray diffraction (HRXRD) measurements and their analysis showed that the best structure has a full width at half maximum of rocking curve (FWHMRC) as low as 21.5 arcsec, and that the intensity distribution of diffraction peaks does not indicate the influence of mosaicisity and dislocation density.

In the present work, the growth specificity of Cd1−xMnxTe layers by the molecular beam epitaxy and results of experimental studies of several Cd1−xMnxTe layers grown on GaAs(100) hybrid substrates with CdTe buffers are presented. Our efforts were concentrated on creating structures with high crystallographic quality, specifically aiming to reduce the number of defects. Experimental results for the selected structures demonstrated that the Cd1−xMnxTe layers, with varying x, exhibit high crystallographic and surface morphology quality. Specifically, high-resolution X-ray diffraction measurements and their analysis revealed that the intensity distribution does not reflect the effects of mosaicity or dislocation density. The aim of the work was to characterize the Mn dopant depending on the x-value. The magnetic properties were studied as a function of manganese concentration by using electron paramagnetic resonance. By applying continuous wave electron paramagnetic resonance in the wide temperature range, we observed two groups of lines: from manganese and from so-called low field magnetic absorption.