Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Mid‐infrared (Mid‐IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single‐pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single‐pixel imaging primarily depends on the performance of the photodetector and the sampling system. Photodetectors based on black phosphorus (BP) exhibit low dark current, high specific detectivity ( D ^* ), and room‐temperature operability. Artificial intelligence (AI)‐assisted sampling systems feature efficient and intelligent data reconstruction capabilities. In this work, we demonstrate an AI‐driven black phosphorus (BP)/molybdenum disulfide (MoS ₂ )/hexagonal boron nitride (hBN) heterojunction for Mid‐IR photodetection and imaging. By optimizing the thickness of the heterojunction, the quality of the interface, and the AI algorithm, we achieved high‐performance Mid‐IR photodetection and imaging. Specifically, the photodetector has a responsivity of 0.25 A/W at a wavelength of 3,390 nm, an extremely high D ^* of 3.7 × 10 ⁹ Jones, a response speed as low as 7 ms, and after AI optimization, the image contrast ratio has been improved from 0.227 to 0.890. At the same time, the sampling rate requirement can be reduced to 25 %. Our research indicates that the efficient combination of BP heterojunction photodetectors and AI technology is expected to accelerate the development of Mid‐IR photodetectors and imaging systems.

Sodium-ion batteries (SIBs) as a replaceable energy storage technology have attracted extensive attention in recent years. The design and preparation of advanced anode materials with high capacity and excellent cycling performance for SIBs still face enormous challenges. Herein, a solution method is developed for in situ synthesis of anti-aggregation tellurium nanorods/reduced graphene oxide (Te NR/rGO) composite. The material working as the sodium-ion battery (SIB) anode achieves a high reversible capacity of 338 mAh g⁻¹ at 5 A g⁻¹ and exhibits up to 93.4% capacity retention after 500 cycles. This work demonstrates an effective preparation method of nano-Te-based composites for SIBs.

With the rapid advancement of information technology, the data demands in transmission rates, processing speed, and storage capacity have been increasing significantly. However, silicon electro-optic modulators, characterized by their weak electro-optic effect, struggle to balance modulation efficiency and bandwidth. To overcome this limitation, we propose an electro-optic modulator based on an all-fiber micro-ring resonator and a p-Si/n-ITO heterojunction, achieving high modulation efficiency and large bandwidth. ITO is introduced in this design, which exhibits an ε-near-zero (ENZ) effect in the communication band. The real and imaginary parts of the refractive index of ITO undergo significant changes in response to variations in carrier concentration induced by the reverse bias voltage, thereby enabling efficient electro-optic modulation. Additionally, the design of the all-fiber micro-ring eliminates coupling losses associated with spatial optical-waveguide coupling, thereby resolving the high insertion loss of silicon waveguide modulators and the challenges of integrating MZI modulation structures. The results demonstrate that this modulator can achieve significant phase shifts at low voltages, with a modulation efficiency of up to 3.08 nm/V and a bandwidth reaching 82.04 GHz, indicating its potential for high-speed optical chip applications.

Photodetectors are now indispensable in our daily lives, and there is a pressing need to explore new materials and mechanisms that can push the boundaries of device performance. Two-dimensional (2D) van der Waals (vdW) semiconductors have emerged recently as a promising material platform with exceptional optoelectronic properties, making them particularly suitable for high-performance photodetectors. However, photoinduced carrier generation in conventional 2D vdW photodetectors are usually limited, and new mechanisms need to be introduced to enhance device performance. Herein, we report a high-performance avalanche photodetector based on selenium (Se) nanoflakes. Our device achieves a high photoresponsivity (R) and specific detectivity (D*) of 361 A·W−1 and 2.4 × 1012 Jones, respectively. These figures of merit are two orders of magnitude higher than that in conventional Se photoconductive photodetectors. As a large bandgap vdW semiconductor, the Se channel allows the application of an extremely large bias voltage across it, and the resulting high electric field leads to the avalanche multiplication of carriers, which lays the groundwork for the improved device performance.