Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects, and locally broken symmetries. We report on the discovery of a noncollinear magnetic structure in superlattices of the ferromagnetic metallic oxide ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ (LSMO) and the correlated metal ${\mathrm{LaNiO}}_3$ (LNO). The exchange interaction between LSMO layers is mediated by the intervening LNO, such that the angle between the magnetization of neighboring LSMO layers varies in an oscillatory manner with the thickness of the LNO layer. The magnetic field, temperature, and spacer thickness dependence of the noncollinear structure are inconsistent with the bilinear and biquadratic interactions that are used to model the magnetic structure in conventional metallic multilayers. A model that couples the LSMO layers to a helical spin state within the LNO fits the observed behavior. We propose that the spin-helix results from the interaction between a spatially varying spin susceptibility within the LNO and interfacial charge transfer that creates localized ${\mathrm{Ni}}^{2+}$ states. Our work suggests a new approach to engineering noncollinear spin textures in metallic oxide heterostructures.

We present a method for nanoscale thermal imaging of insulating thin films using atomic force microscopy (AFM), and we demonstrate its utility on VO₂. We sweep the applied voltage V to a conducting AFM tip in contact mode and measure the local current I through the film. By fitting the IV curves to a Poole–Frenkel conduction model at low V, we calculate the local temperature with spatial resolution better than 50 nm using only fundamental constants and known film properties. Our thermometry technique enables local temperature measurement of any insulating film dominated by the Poole–Frenkel conduction mechanism and can be extended to insulators that display other conduction mechanisms.

Bulk VO2 undergoes an insulator-to-metal transition (IMT) with up to five orders of magnitude change in the resistance at 340 K. However, when VO2 is deposited as a film on a substrate, the strain from the substrate can alter the IMT temperature, resistivity ratio of IMT, and hysteresis. Here, we present single-phase VO2 ultrathin films (thickness less than 20 nm) grown using oxygen plasma molecular beam epitaxy (MBE) on TiO2 (001) and Al2O3 (0001) substrates. First, we modify existing recipes employing ozone MBE and reproduce the best films from literature on TiO2 (001), maintaining an almost three orders of magnitude transition in a 12 nm thick film with TIMT of 308 K (296 K) upon warming (cooling). We then extend our recipe to Al2O3 (0001) substrates where we stabilize a 12 nm thin single-phase VO2 film and observe two orders of magnitude transition at 337 K (329 K) upon warming (cooling), expanding the possible growth methods for ultrathin VO2 films on Al2O3 (0001).

YbB_{6} is a predicted topological insulator, with experimental evidence for conducting surface states of yet-unproven origin. However, its lack of a natural cleavage plane, and resultant surface-dependent polarity, has obscured its study. We use scanning tunneling microscopy to image the cleaved surface of YbB_{6}, which exhibits several coexisting terminations with distinct atomic structures. Our spectroscopic measurements reveal band bending between the terminations, resulting in both conducting and fully gapped domains. In the conducting domains, we observe spectral peaks that are suggestive of Van Hove singularities arising from Rashba spin-split quantum well states. The insulating domains rule out the possibility that YbB_{6} is a strong topological insulator, while the spin-polarized conducting domains suggest possible utility for spintronic devices.