Oxygen vacancies in complex oxides are indispensable for information and energy technologies. There are several means to create oxygen vacancies in bulk materials. However, the use of ionic interfaces to create oxygen vacancies has not been fully explored. Herein, we report an oxide nanobrush architecture designed to create high-density interfacial oxygen vacancies. An atomically well-defined (111) heterointerface between the fluorite CeO₂ and the bixbyite Y₂O₃ is found to induce a charge modulation between Y³⁺ and Ce⁴⁺ ions enabled by the chemical valence mismatch between the two elements. Local structure and chemical analyses, along with theoretical calculations, suggest that more than 10% of oxygen atoms are spontaneously removed without deteriorating the lattice structure. Our fluorite–bixbyite nanobrush provides an excellent platform for the rational design of interfacial oxide architectures to precisely create, control, and transport oxygen vacancies critical for developing ionotronic and memristive devices for advanced energy and neuromorphic computing technologies.

We report on the design and fabrication of high-power, high-brightness diode-pumped vertical-external-cavity surface-emitting lasers. Over 3 W continuous wave fundamental transverse mode $\left({\mathrm{TEM}}_{00}\right)$ output at 980 nm with a high slope efficiency of 44% is demonstrated at room temperature. The diffraction-limited beam with $M^2$ factor of 1.15 at high-power operation is achieved. A vertical-external-cavity surface-emitting laser operating near 976 nm with a diffraction-limited beam is used to pump the core of 3 cm long $\mathrm{Er}∕\mathrm{Yb}$ -codoped single-mode phosphate fiber lasers. An output power in excess of 250 mW at 1535 nm with a slope efficiency of 29% is obtained without any cooling.

Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH₂). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 10²¹ cm⁻³, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm² V⁻¹ s⁻¹, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.