The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano- and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

Exploiting pattern formation – such as that observed in nature – in the context of micro/nanotechnology could have great benefits if coupled with the traditional top-down lithographic approach. Here, we demonstrate an original and simple method to produce unique, localized and controllable self-organised patterns on elastomeric films. A thin, brittle silica-like crust is formed on the surface of polydimethylsiloxane (PDMS) using oxygen plasma. This crust is subsequently cracked via the deposition of a thin metal film – having residual tensile stress. The density of the mud-crack patterns depends on the plasma dose and on the metal thickness. The mud-crack patterning can be controlled depending on the thickness and shape of the metallization – ultimately leading to regularly spaced cracks and/or metal mesa structures. Such patterning of the cracks indicates a level of self-organization in the structuring and layout of the features – arrived at simply by imposing metallization boundaries in proximity to each other, separated by a distance of the order of the critical dimension of the pattern size apparent in the large surface mud-crack patterns.

Here, we study cracking of nanometre and sub-nanometre-thick metal lines (titanium, nickel, chromium, and gold) evaporated onto commercial polydimethylsiloxane (PDMS) substrates. Mechanical and electromechanical testing reveals potentially technologically useful effects by harnessing cracking. When the thin film metal lines are subjected to uniaxial longitudinal stretching, strain-induced cracks develop in the film. The regularity of the cracking is seen to depend on the applied longitudinal strain and film thickness—the findings suggest ordering and the possibility of creating metal mesas on flexible substrates without the necessity of lithography and etching. When the metal lines are aligned transversally to the direction of the applied strain, a Poisson effect-induced electrical ‘self-healing’ can be observed in the films. The Poisson effect causes process-induced cracks to short circuit, resulting in the lines being electrically conducting up to very high strains (~40%). Finally, cracking results in the observation of an enhanced transversal gauge factor which is ~50 times larger than the geometric gauge factor for continuous metal films—suggesting the possibility of high-sensitivity thin-film metal strain gauge flexible technology working up to high strains.

Terahertz time-domain spectroscopy has been used to characterise the refractive index and absorption coefficient of samples fabricated using the negative photoresist SU-8, in the frequency range 0.1–1.6 THz. At a frequency of 1 THz, the corresponding dielectric constant and dielectric loss tangent are 2.9 and 6.3 × 10^–6, respectively.