In the face of increasingly complex application scenarios, there is an urgent need for (Radio Frequency Identification) RFID systems that are capable of accurately identifying microwave signals of different frequency bands. Based on the acumen detection characteristics of microwave signals by lithium niobate electro-optic modulators, applying large-bandwidth thin-film lithium niobate electro-optic modulation to RFID systems can achieve efficient operation across multiple frequency bands. This study discusses, in detail, the design, simulation, fabrication, and testing process of the electro-optic modulator to obtain a high-performance, large-bandwidth lithium niobate electro-optic modulator. By using multilayer lithography techniques to prepare thick traveling-wave electrodes, the problem of irregular cross-sections during the fabrication of thick electrodes has been successfully reduced, improving the stability and controllability of the device. Test results show that the insertion loss of the electro-optic modulator is about 6 dB, the extinction ratio is 36.5 dB, the optical waveguide mode field is 1 μm, the full-band characteristic impedance is 50 Ω, the test bandwidth is 50 GHz, and the half-wave voltage is 1.8 V. Compared with existing optimization schemes, this design not only achieves a large bandwidth and a small half-wave voltage, but also proposes a new fabrication process scheme, optimizing the process and resulting in samples with stable performance.