Ruiqi Zhang

Dr. Ruiqi Zhang

orcid

Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 October 2017 in Journal of the American Chemical Society
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Journal Article
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WHWei Hu
Wei Hu
LLLin Lin
Lin Lin
RZRuiqi Zhang
Ruiqi Zhang
CYChao Yang
Chao Yang
JYJinlong Yang
Jinlong Yang

22 July 2015 in Nanoscale
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RZRuiqi Zhang
Ruiqi Zhang
BLBin Li
Bin Li
JYJinlong Yang
Jinlong Yang
Recently, a new type of two-dimensional layered material, i.e. a nitrogenated holey two-dimensional structure C2N-h2D, has been synthesized using a simple wet-chemical reaction and used to fabricate a field-effect transistor device (Nat. Commun., 2015, 6, 6486). Here we have performed a first-principles study of the electronic properties of few-layer C2N-h2D with different stacking orders and layer numbers. Because of the interlayer coupling mainly in terms of the orbital interaction, band structure of this system, especially splitting of the bands and band gap, depends on its stacking order between the layers, and the band gap exhibits monotonically decreasing behavior as the layer number increases. All the few-layer C2N-h2D materials have characteristics of direct band gap, irrespective of the stacking order and layer number examined in our calculations. And bulk C2N-h2D has an indirect or direct band gap, depending on the stacking order. Besides, when we apply an out-of-plane electric field on few-layer C2N-h2D, its band gap will decrease as the electric field increases due to a giant Stark effect except for the monolayer case, and even a semiconductor-to-metal transition may occur for few-layer C2N-h2D with more layers under an appropriate electric field. Owing to their tunable band gaps in a wide range, the layered C2N-h2D materials will have tremendous opportunities to be applied in nanoscale electronic and optoelectronic devices.

4 September 2018 in The Journal of Physical Chemistry Letters
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Journal Article
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RZRuiqi Zhang
Ruiqi Zhang
LZLili Zhang
Lili Zhang
QZQijing Zheng
Qijing Zheng
PGPengfei Gao
Pengfei Gao
JZJin Zhao
Jin Zhao
JYJinlong Yang
Jinlong Yang

2 February 2016 in Journal of Materials Chemistry C
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WHWei Hu
Wei Hu
TWTian Wang
Tian Wang
RZRuiqi Zhang
Ruiqi Zhang
JYJinlong Yang
Jinlong Yang
The effects of interlayer coupling and electric fields can be used to effectively control the Schottky barriers and contact formation at the interface of graphene and MoS2heterobilayers.

8 July 2020 in Physical Review B
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YZYubo Zhang
Yubo Zhang
JFJames Furness
James Furness
RZRuiqi Zhang
Ruiqi Zhang
ZWZhi Wang
Zhi Wang
AZAlex Zunger
Alex Zunger
JSJianwei Sun
Jianwei Sun
Correlated materials with open-shell d and f ions having degenerate band-edge states show a rich variety of interesting properties ranging from metal-insulator transition to unconventional superconductivity. The textbook view for the electronic structure of these materials is that mean-field approaches are inappropriate, as the interelectronic interaction U is required to open a band gap between the occupied and unoccupied degenerate states while retaining symmetry. We show that the latter scenario often defining what Mott insulators are is in fact not needed for the 3d binary oxides MnO, FeO, CoO, and NiO. The mean-field-like band theory can indeed lift such degeneracies in the binaries when nontrivial unit-cell representations (polymorphous networks) are allowed to break symmetries, in conjunction with a recently developed nonempirical exchange and correlation density functional without an on-site interelectronic interaction U. We explain how density-functional theory in the polymorphous representation achieves band-gap opening in correlated materials through a separate mechanism from the Mott-Hubbard approach. We show the method predicts magnetic moments and gaps for the four binary monoxides in both the antiferromagnetic and paramagnetic phases, offering an effective alternative to symmetry-conserving approaches for studying a range of functionalities in open d- and f-shell complex materials.

7 June 2021 in Communications Physics
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RZRuiqi Zhang
Ruiqi Zhang
CLChristopher Lane
Christopher Lane
BSBahadur Singh
Bahadur Singh
JNJohannes Nokelainen
Johannes Nokelainen
BBBernardo Barbiellini
Bernardo Barbiellini
JSJianwei Sun
Jianwei Sun
Recent discovery of superconductivity in the doped infinite-layer nickelates has renewed interest in understanding the nature of high-temperature superconductivity more generally. The low-energy electronic structure of the parent compound NdNiO2, the role of electronic correlations in driving superconductivity, and the possible relationship between the cuprates and the nickelates are still open questions. Here, by comparing LaNiO2 and NdNiO2 systematically within a parameter-free, all-electron first-principles density-functional theory framework, we reveal the role of Nd 4f electrons in shaping the ground state of pristine NdNiO2. Strong similarities are found between the electronic structures of LaNiO2 and NdNiO2, except for the effects of the 4f electrons. Hybridization between the Nd 4f and Ni 3d orbitals is shown to significantly modify the Fermi surfaces of various magnetic states. In contrast, the competition between the magnetically ordered phases depends mainly on the gaps in the Ni $$3{d}_{{x}^{2}-{y}^{2}}$$ 3 d x 2 − y 2 band. Our estimated value of the on-site Hubbard U in the nickelates is similar to that in the cuprates, but the value of the Hund’s coupling JH is found to be sensitive to the Nd magnetic moment. In contrast with the cuprates, NdNiO2 presents 3D magnetism with competing antiferromagnetic and (interlayer) ferromagnetic exchange, which may explain why the Tc is lower in the nickelates.