All spin logic (ASL) device is one of the promising post‐CMOS candidates. Owing to unique features such as non‐volatility, simple configuration, ultra‐low‐switching energy, and good scalability, ASL devices can be exploited in logic applications. Based on the characteristics of non‐volatility and bistable states of ASL device, an RS flip‐flop is proposed which is composed of seven ASL devices and employs a complementary clock signal scheme. Using the coupled spin‐transport/magneto‐dynamics model, validity of its logic operation is demonstrated. As a fundamental building block of sequential logic circuits, the proposed RS flip‐flop will be an useful component for designing large‐scale ASL sequential logic circuits.

In this paper, we propose a performance optimization scheme for all-spin logic device (ASLD); this scheme makes use of asymmetric tunneling layer to overcome the conductivity mismatch problem. Besides, for the material selection of device, this scheme makes advantage of silver as an energy efficient interconnect material to reduce the switching delay. The simulation results indicate that the high spin injection efficiency can be obtained by increasing the thickness of the transmitter-side tunneling layer or decreasing the thickness of the receive-side tunneling layer. Therefore, the structure of asymmetric tunneling layer is expected to be more effective for spin injection. Compared with the traditional interconnect that copper or aluminum is used as a channel material, the time for magnetic moment reversal and the spin current flowing into the output magnet are predicated to be optimized when silver is chosen as the channel material, which can attribute to the fact that the conductivity of silver material is larger, the spin diffusion length is longer, and the spin-orbit interaction is weaker. Meanwhile, when the critical switching current requires for the magnetization reversal is applied, the reliable working length of silver channel is significantly longer than that of copper or aluminum channel. These abovementioned results provide a new method for the performance optimization of ASLD.

Under different nanomagnets’ size, switching behaviour of all spin logic (ASL) devices constructed with Co and permalloy (Py) nanomagnets are studied by using the coupled spin‐transport/magneto‐dynamics model. The results indicate that ASL devices’ switching delay and energy dissipation can be reduced by decreasing the thickness of nanomagnets. The switching delay and energy dissipation of PyASL are lower than those of CoASL in a smaller thickness of nanomagnet, but they increase much faster than those of CoASL when the nanomagnets (FM) thickness increases. With the dimensional scaling of nanomagnets, the ASL devices’ switching delay and energy dissipation decrease rapidly and the influence of thermal noise become weak. Moreover, under the same nanomagnet volume, ASL devices’ switching delay, energy dissipation, and energy barrier can be reduced by decreasing aspect ratio. These findings can provide guidelines for optimising the ASL devices’ materials and size.

The need for low-power alternatives to digital electronic circuits has aroused the increasing interest in spintronic devices for their potentials to overcome the power and performance limitations of (CMOS). In particular, all spin logic (ASL) technology, which stores information using the magnetization direction of the nano-magnet and communicates using spin current, is generally thought to be a good post-CMOS candidate for possessing capabilities such as nonvolatiliy, high density, low energy dissipation. In this paper, based on nano-magnetic dynamics described by Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation and transport physics of spin injection and spin diffusion, a coupled spin-transport/magneto-dynamics model for ASL is established. Under different channel lengths and applied voltages, the switching characteristics of ASL device comprised of Co and Permalloy (Py) nano-magnets are analyzed by using the coupled spin-transport/magneto-dynamics model. The results indicate that the switch delay, energy dissipation and thermal noise effect of PyASL are lower than those of CoASL. The main reason is that the saturation magnetization of Py is less than that of Co. Under the same applied voltage, the maximal channel length of PyASL is longer than that of CoASL when ASL device can switch accurately. Moreover, the two ASL devices' switching delay can be reduced by reducing channel length or increasing applied voltage, and the energy dissipation can be reduced by reducing channel length or applied voltage, whereas there are no optimized applied voltages to minimize the energy-delay product. In addition, the influences of thermal noise on switching delay and energy dissipation can be improved by lowering channel length, but increasing applied voltage can only improve the influence of thermal noise on switching delay. The above-mentioned conclusions will supply essential guidelines for optimizing the ASL devices' materials and configuration.

由于石墨烯的电导率相比典型的金属材料更大，自旋弛豫时间更长，自旋轨道相互作用更弱，从而在相同的注入电流情况下，自旋电流在石墨烯材料中的耗散作用更弱.基于自旋传输和磁化动力学耦合模型，研究了石墨烯沟道全自旋逻辑器件的开关特性.结果显示，在相同神经元膜电位的受激发放在神经系统的信息传递中起着重要作用.基于一个受动态突触刺激的突触后神经元发放模型，采用数值模拟和傅里叶变换分析的方法研究了动态突触、神经耦合与时间延迟对突触后神经元发放的影响.结果发现：突触前神经元发放频率与Hodgkin-Huxley神经元的固有频率发生共振决定了突触后神经元发放的难易，特定频率范围内的电流刺激有利于神经元激发，动态突触输出的随机突触电流中这些电流刺激所占的比率在很大程度上影响了突触后神经元的发放次数；将突触后神经元换成神经网络后，网络中神经元之间的耦合可以促进神经元的发放，耦合中的时间延迟可以增强这种促进作用，但是不会改变神经耦合对神经元发放的促进模式.