The performance of ultrafast scintillators under ultrahigh dose rate is highly important for applications utilizing brilliant radiation sources. In this work, the scintillation properties of β-Ga₂O₃, a high-performance ultrafast wide-bandgap semiconductor scintillator, are systematically investigated under dose rates of 10⁷ to 10⁹ Gy/s for the first time by employing ultrashort high-charge electron bunches (bunch charge from 500 fC to 50 pC) generated from a superconducting radio-frequency accelerator. Our results show that in spite of the ultrahigh dose rate, the scintillation intensity was still linearly proportional to the electron bunch charge. Lifetime analysis reveals a fast decay component ranging from 3 to 4 ns, along with an average lifetime of 20 ns. These findings establish a solid foundation for the application of β-Ga₂O₃ as the scintillation material for high-charge electron sources such as laser-wakefield accelerated electrons.