This study fabricated SrTiO₃ grain boundary layer ceramics using hot isostatic pressing (HIP), achieving a remarkably high dielectric constant of 60,350 and a superior breakdown strength of 1722 kV/m. Microstructural characterization via scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that HIP treatment significantly refined grain size uniformity and homogenized bismuth distribution at grain boundaries, thus enhancing the interfacial barrier effect. Probe-based impedance spectroscopy elucidated the dielectric behavior and conduction mechanisms of individual grain boundaries. HIP promotes the formation of interfacial barrier layers (IBLs), significantly improving electrical performance. Compared to untreated samples (average breakdown strength: 555 kV/m), HIP-processed ceramics exhibited a threefold enhancement in breakdown strength (1722 kV/m). The treated ceramic exhibited excellent temperature stability, with TCC ≤8% over −55 to 125 °C. The optimized dielectric properties stem from HIP-induced structural modifications, including reduced oxygen vacancy concentrations and homogenized electronic distribution at grain boundaries. These findings establish a quantitative correlation between HIP parameters, grain boundary restructuring, and macroscopic performance, providing critical insights for designing high-energy-density dielectric materials.

Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm² and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of −55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications.