The present work gives an overview of the developments in surface-enhanced Raman scattering (SERS) with metal-coated porous silicon used as an active substrate. We focused this review on the research referenced to SERS-active materials based on porous silicon, beginning from the patent application in 2002 and enclosing the studies of this year. Porous silicon and metal deposition technologies are discussed. Since the earliest studies, a number of fundamentally different plasmonic nanostructures including metallic dendrites, quasi-ordered arrays of metallic nanoparticles (NPs), and metallic nanovoids have been grown on porous silicon, defined by the morphology of this host material. SERS-active substrates based on porous silicon have been found to combine a high and well-reproducible signal level, storage stability, cost-effective technology and handy use. They make it possible to identify and study many compounds including biomolecules with a detection limit varying from milli- to femtomolar concentrations. The progress reviewed here demonstrates the great prospects for the extensive use of the metal-coated porous silicon for bioanalysis by SERS-spectroscopy.
Plasmonic nanostructures demonstrating an activity in the surface-enhanced Raman scattering (SERS) spectroscopy have been fabricated by an immersion deposition of silver nanoparticles from silver salt solution on mesoporous silicon (meso-PS). The SERS signal intensity has been found to follow the periodical repacking of the silver nanoparticles, which grow according to the Volmer–Weber mechanism. The ratio of silver salt concentration and immersion time substantially manages the SERS intensity. It has been established that optimal conditions of nanostructured silver layers formation for a maximal Raman enhancement can be chosen taking into account a special parameter called effective time: a product of the silver salt concentration on the immersion deposition time. The detection limit for porphyrin molecules CuTMPyP4 adsorbed on the silvered PS has been evaluated as 10−11 M.