A large-area, solid-state detector with single-hit precision timing measurement will enable several breakthrough experimental advances for the direct measurement of particles in space. Silicon microstrip detectors are the most promising candidate technology to instrument the large areas of the next-generation astroparticle space borne detectors that could meet the limitations on power consumption required by operations in space. We overview the novel experimental opportunities that could be enabled by the introduction of the timing measurement, concurrent with the accurate spatial and charge measurement, in Silicon microstrip tracking detectors, and we discuss the technological solutions and their readiness to enable the operations of large-area Silicon microstrip timing detectors in space.

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (<10 µm) a-Si:H device deposited on a thin polyimide sheet is a very valid option for this application. Furthermore, a-Si:H is a material that has an intrinsically high radiation hardness. In order to develop these devices, the HASPIDE (Hydrogenated Amorphous Silicon Pixel Detectors) collaboration has implemented two different device configurations: n-i-p type diodes and charge-selective contact devices.Charge-selective contact-based devices have been studied for solar cell applications and, recently, the above-mentioned collaboration has tested these devices for X-ray dose measurements. In this paper, the HASPIDE collaboration has studied the X-ray and proton response of charge-selective contact devices deposited on Polyimide. The linearity of the photocurrent response to X-ray versus dose-rate has been assessed at various bias voltages. The sensitivity to protons has also been studied at various bias voltages and the wide range linearity has been tested for fluxes in the range from 8.3 × 10⁷ to 2.49 × 10¹⁰ p/(cm² s).

The Schwarzschild-Couder Telescope (SCT) is a proposal for the Medium Size Telescopes of the Cherenkov Telescope Array. Its concept is based on a two-mirror optical system designed to improve the telescope field of view and image resolution with respect to the single mirror Davies-Cotton solution. The SCT camera is planned to be instrumented with 177 photodetection modules, each composed of 64 Silicon Photomultiplier (SiPM) pixels. The third generation of $6 x 6~mm^2$ high density NUV SiPMs (NUV-HD3) produced by Fondazione Bruno Kessler (FBK) in collaboration with INFN has been used to equip optical units to be integrated on the upgrade of the camera of the SCT prototype (pSCT). Each optical unit is composed of an array of 16 NUV-HD3 SiPMs coupled with the front-end electronics, which is designed for full-waveform nanosecond readout and digitization using the TARGET-7 ASIC. Several optical units have been assembled and tested in the laboratories of INFN and have been integrated on the camera of the pSCT telescope, that is currently operating at the Fred Lawrence Whipple Observatory. In this contribution we report on the development, assembly and calibration of the optical units that are currently taking data on the pSCT camera.

Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 um thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 um thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.