Silicon does not emit light efficiently, therefore the integration of other light‐emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III‐V‐to‐silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide‐coupled on‐chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra‐dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide‐band LEDs, monolithic O‐band lasers and micro‐disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with a high resolution. The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation (line spacing in the range of 100 MHz to 1 GHz). However, their integrated and low-cost counterparts, which are integrated semiconductor mode-locked lasers, are limited by their large comb spacing, small number of lines and broad optical linewidth. In this study, we report a demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization. The use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate. The 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical lines. The sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth (<400 kHz) indicate notably stable mode-locking. Such integrated dense comb lasers are very promising, for example, for high-resolution and real-time spectroscopy applications.

In the paper, we review our work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing. We elaborate on the integration strategy and describe a broad range of devices realized on this platform covering a wavelength range from 850 nm to 3.85 μm.

Holography¹ has always held special appeal as it is able to record and display spatial information in three dimensions^2–10. Here we show how to augment the capabilities of digital holography^11,12 by using a large number of narrow laser lines at precisely defined optical frequencies simultaneously. Using an interferometer based on two frequency combs^13–15 of slightly different repetition frequencies and a lensless camera sensor, we record time-varying spatial interference patterns that generate spectral hypercubes of complex holograms, revealing the amplitudes and phases of scattered wave-fields for each comb line frequency. Advancing beyond multicolour holography and low-coherence holography (including with a frequency comb¹⁶), the synergy of broad spectral bandwidth and high temporal coherence in dual-comb holography opens up novel optical diagnostics, such as precise dimensional metrology over large distances without interferometric phase ambiguity, or hyperspectral three-dimensional imaging with high spectral resolving power, as we demonstrate with molecule-selective imaging of an absorbing gas.

The negatively charged tin-vacancy (${\mathrm{SnV}}^{-}$) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The ${\mathrm{SnV}}^{-}$ has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a $\pi$-pulse fidelity of up to $99.51\pm 0.03\%$ and a Hahn-echo coherence time of $T_2^{\mathrm{echo}}=170.0\pm 2.8\mathrm{\mu }\mathrm{s}$, both the highest yet reported for ${\mathrm{SnV}}^{-}$ platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 K where ample cooling power is available to mitigate drive-induced heating. These results pave the way for ${\mathrm{SnV}}^{-}$ spins to be used as a building block for future quantum technologies.

Hybrid III–V-on-silicon semiconductor optical amplifiers with high-gain and high-output-power are important in many applications such as transceivers, integrated microwave photonics and photonic beamforming. In this work we present the design, fabrication and characterization of high-gain, high-output-power III–V-on-silicon semiconductor optical amplifiers. The amplifiers support a hybrid III–V/Si optical mode to reduce confinement in the active region and increase the saturation power. A small-signal gain of 27 dB, a saturation power of 17.24 dBm and an on-chip output power of 17.5 dBm is measured for a current density of 4.9 kA/cm² (power consumption of 540 mW) at room temperature for an amplifier with a total length of 1.45 mm. The amplifiers were realized using a 6 quantum well InGaAsP active region, which was previously used to fabricate high-speed directly modulated DFB lasers, enabling their co-integration.