Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications. In this paper, a novel radiation-hardened triple modular redundancy (TMR) design for anti-radiation reinforcement is proposed based on the utilization of STT-MTJ devices. Simulation results demonstrate the radiation-hardened performance of the design. This shows improvements in the design’s robustness against ionizing radiation.

At present, magnetic induction switches are widely used in industrial automation control and biological sensing systems. A core module composed of a magnetic sensing device and a signal conditioning circuit is designed and analyzed in this paper. Utilizing a permalloy film with the anisotropic magneto-resistance (AMR) effect, the novel magnetic induction switch shows its ability to correctly detect the direction of magnetic fields. Furthermore, an interfacial circuit based on a trans-impedance amplifier (TIA) is designed to measure and regulate the output signal of the sensing device. Accurate simulation results show the gain of the TIA reaches up to 51.36 dB with a bandwidth of 1.3 GHz and a power consumption of 3.65 mW. The outstanding performance of the proposed module demonstrates the possibility of solving the problems induced by high input impedance, high frequency, and parasitic effects in magnetic induction switches.