Understanding thermal transport mechanisms across material interfaces is crucial for advancing semiconductor technologies, particularly in miniaturized devices operating under extreme power densities ^1,2 . Although the interface phonon-mediated processes are theoretically established ^3–6 as the dominant mechanism for interfacial thermal transport in semiconductors ⁷ , their nanoscale dynamics remain experimentally elusive owing to challenges in measuring the temperature and non-equilibrium phonon distributions across the buried interface ^8–11 . Here we overcome these limitations by using in situ vibrational electron energy-loss spectroscopy (EELS) in an electron microscope to nanoscale profile temperature gradients across the AlN–SiC interface during thermal transport and map its non-equilibrium phonon occupations at sub-nanometre resolution. We observe a sharp temperature drop within about 2 nm across the interface, enabling direct extraction of relative interfacial thermal resistance (ITR). During thermal transport, the mismatch of phonon modes’ thermal conductivity at the interface causes substantial non-equilibrium phonons nearby, making the populations of interface modes different under forward and reverse heat flow and also leading to marked changes in the modal temperature of AlN optical phonons within about 3 nm of the interface. These results reveal the phonon transport dynamics at the (sub-)nanoscale and establish the inelastic phonon scattering mechanism involved by interface modes, offering valuable insights into the engineering of thermal interfaces.

In single unit-cell FeSe grown on SrTiO₃, the superconductivity transition temperature features a significant enhancement. Local phonon modes at the interface associated with electron-phonon coupling may play an important role in the interface-induced enhancement. However, such phonon modes have eluded direct experimental observations. The complicated atomic structure of the interface brings challenges to obtain the accurate structure-phonon relation knowledge. Here, we achieve direct characterizations of atomic structure and phonon modes at the FeSe/SrTiO₃ interface with atomically resolved imaging and electron energy loss spectroscopy in an electron microscope. We find several phonon modes highly localized (~1.3 nm) at the unique double layer Ti-O terminated interface, one of which (~ 83 meV) engages in strong interactions with the electrons in FeSe based on ab initio calculations. This finding of the localized interfacial phonon associated with strong electron-phonon coupling provides new insights into understanding the origin of superconductivity enhancement at the FeSe/SrTiO₃ interface.

The high-energy ball milling method was adopted to explore the influence of ball milling parameters, such as milling speed and additive amounts of process control agent (PCA) on tungsten powder. The morphology and microstructure of tungsten powder in the process of refinement were characterized by field-emission scanning electron microscope (FE-SEM), field-emission transmission electron microscope (FE-TEM), and X-ray diffractometer (XRD). Results revealed that the ball milling process and the refinement of tungsten particle and grain can be largely influenced by these two parameters. The milling efficiency was found to be highest with the milling speed of 700 rpm and additive amounts of 8% PCA. The mechanisms for the effect of these two parameters and milling time on the refinement process were discussed. Nanocrystalline tungsten powder with a particle size and grain size smaller than 100 nm was obtained, and the grain size of 5–15 nm was fabricated successfully under the highest milling efficiency conditions.

Compared with single-layer two-dimensional (2D) materials, bilayer, trilayer, and few-layer 2D materials exhibit enhanced band structure tunability, improved electrical and thermal properties, and superior mechanical strength and barrier performance. However, the layer-controlled synthesis of 2D films with high layer number uniformity remains challenging, due to the difficulty in the additional layer nucleation and the effective realization of layer-by-layer growth. Herein, we report an edge-feeding synchronous epitaxial growth mode breaking the limit of traditional epitaxy theories. An efficient heterogeneous Cu–Cu₂O catalyst is demonstrated, where graphene edge-surrounding Cu₂O is crucial in precursor dissociation, atomic carbon diffusion, and edge energy reduction. The synchronous growth method can be generalized to the layer-controlled synthesis of 2–7-layer graphene films. Relying on this growth strategy, we successfully achieved the industrial-scale production of homogeneous A3-sized ABA-trilayer graphene films (42 × 30 square centimeters) with good mechanical properties and peeling-transferring intactness. Our method offers a robust strategy for the layer-controlled synthesis of 2D material films.