Active optical metadevices have attracted growing interest for the use in nanophotonics owing to their flexible control of optics. In this work, by introducing the phase-changing material Ge₂Sb₂Te₅ (GST), which exhibits remarkably different optical properties in different crystalline states, we investigate the active optical radiation manipulation of a resonant silicon metasurface. A designed double-nanodisk array supports a strong toroidal dipole excitation and an obvious electric dipole response. When GST is added, the toroidal response is suppressed, and the toroidal and electric dipoles exhibit pronounced destructive interference owing to the similarity of their far-field radiation patterns. When the crystallization ratio of GST is varied, the optical radiation strength and spectral position of the scattering minimum can be dynamically controlled. Our work provides a route to flexible optical radiation modulation using metasurfaces.

The dual band filtering characteristics of a spoof surface plasmonic waveguide (WG) loaded with a composite slot structure are studied in the present paper. The proposed composite slot structure enables the plasmonic WG to work at dual bands in the microwave region, where the working bandwidth can be flexibly adjusted with a broad isolation band between them. In particular, the second bandwidth can be adjusted independently without affecting the first passband by controlling the special parameter of the composite slot. As a demonstration, the measurement results of the proposed prototype filter illustrate that the plasmonic filtering WG has a dual bandpass performance with excellent frequency selectivity, where the insertion loss of the dual-band filter is less than −3 dB in the frequency from 2.7 GHz to 6.7 GHz and 7.7 GHz to 9.1 GHz, and the stopband rejection level is lower than −10 dB from 6.9 GHz to 7.5 GHz. Compared with the traditional dual band plasmonic filtering WG, the proposed filter has compact physical size, lower insertion loss in the passband and stronger isolation ability between the two passbands.

Active control of terahertz waves is a critical application for terahertz devices. Silicon is widely used in large-scale integrated circuit and optoelectronic devices, and also shows great potential in the terahertz field. In this paper, a p-Si hybrid metasurface device is proposed and its terahertz characteristics under avalanche breakdown effect is investigated. In the study, a plasmon-induced transparency (PIT) effect caused by the near-field coupling of the bright mode and the dark mode is observed in the transmission spectrum. Due to avalanche breakdown effect, the resonance of the PIT metamaterial disappears as the current increased. Carriers existed in the interface between the metasurface and substrate result to a dipole resonance suppression. When the current continues increasing, the maximal modulation depth can reach up to 99.9%, caused by the avalanche effect of p-Si. Experimental results demonstrate that the avalanche breakdown p-Si can achieve a performance modulation depth, bringing much more possibilities for terahertz devices.