The Raman scattering of single- and few-layered WS₂ is studied as a function of the number of S-W-S layers and the excitation wavelength in the visible range (488, 514 and 647 nm). For the three excitation wavelengths used in this study, the frequency of the A_1g(Γ) phonon mode monotonically decreases with the number of layers. For single-layer WS₂, the 514.5 nm laser excitation generates a second-order Raman resonance involving the longitudinal acoustic mode (LA(M)). This resonance results from a coupling between the electronic band structure and lattice vibrations. First-principles calculations were used to determine the electronic and phonon band structures of single-layer and bulk WS_2. The reduced intensity of the 2LA mode was then computed, as a function of the laser wavelength, from the fourth-order Fermi golden rule. Our observations establish an unambiguous and nondestructive Raman fingerprint for identifying single- and few-layered WS₂ films.

Humidity sensors have been extensively used in various fields, and numerous problems are encountered when using humidity sensors, including low sensitivity, long response and recovery times, and narrow humidity detection ranges. Using graphene oxide (G-O) films as humidity sensing materials, we fabricate here a microscale capacitive humidity sensor. Compared with conventional capacitive humidity sensors, the G-O based humidity sensor has a sensitivity of up to 37800% which is more than 10 times higher than that of the best one among conventional sensors at 15%-95% relative humidity. Moreover, our humidity sensor shows a fast response time (less than 1/4 of that of the conventional one) and recovery time (less than 1/2 of that of the conventional one). Therefore, G-O appears to be an ideal material for constructing humidity sensors with ultrahigh sensitivity for widespread applications.

Graphene is a two-dimensional network in which sp²-hybridized carbon atoms are arranged in two different triangular sub-lattices (A and B). By incorporating nitrogen atoms into graphene, its physico-chemical properties could be significantly altered depending on the doping configuration within the sub-lattices. Here, we describe the synthesis of large-area, highly-crystalline monolayer N-doped graphene (NG) sheets via atmospheric-pressure chemical vapor deposition, yielding a unique N-doping site composed of two quasi-adjacent substitutional nitrogen atoms within the same graphene sub-lattice (N₂^AA). Scanning tunneling microscopy and spectroscopy (STM and STS) of NG revealed the presence of localized states in the conduction band induced by N₂^AA-doping, which was confirmed by ab initio calculations. Furthermore, we demonstrated for the first time that NG could be used to efficiently probe organic molecules via a highly improved graphene enhanced Raman scattering.