Owing to the mixed electron/hole and ion transport in the aqueous environment, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-based organic electrochemical transistor has been regarded as one of the most promising device platforms for bioelectronics. Nonetheless, there exist very few in-depth studies on how intrinsic channel material properties affect their performance and long-term stability in aqueous environments. Herein, we investigated the correlation among film microstructural crystallinity/composition, device performance, and aqueous stability in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) films. The highly organized anisotropic ordering in crystallized conducting polymer films led to remarkable device characteristics such as large transconductance (∼20 mS), extraordinary volumetric capacitance (113 F·cm⁻³), and unprecedentedly high [μC^*] value (∼490 F·cm⁻¹V⁻¹s⁻¹). Simultaneously, minimized poly(styrenesulfonate) residues in the crystallized film substantially afforded marginal film swelling and robust operational stability even after >20-day water immersion, >2000-time repeated on-off switching, or high-temperature/pressure sterilization. We expect that the present study will contribute to the development of long-term stable implantable bioelectronics for neural recording/stimulation.

The capacitive behavior of pentacene films was investigated in the metal-semiconductor-metal (MSM) diode structure. Impedance analysis of diodes with a thick pentacene layer up to 1012 nm showed a full depletion of the organic layer. This observation allowed us to regard the MSM diode as a parallel-plate capacitor in the reverse-bias regime without current flow. Under forward-bias, the diode was evaluated through frequency-dependent impedance measurements by using an equivalent circuit composed of a single parallel resistance-capacitance circuit. The analysis of the data in both the reverse and forward bias regime led us to electrical methods for quantifying dielectric properties of pentacene.

In spite of impressive improvements achieved for organic field-effect transistors (OFETs), there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-the-art OFETs. Nonetheless, currently there is a strong need for specific OFET compact models when device-to-system integration is an important issue. We briefly describe the most fundamental characters of organic semiconductors and OFETs, which set the bottom line dictating the requirement of an original model different from that of conventional inorganic devices. Along with an introduction to the principles of compact modeling for circuit simulation, a comparative analysis of the reported models is presented with an emphasis on their primary assumptions and applicability aspects. Critical points for advancing OFET compact models are discussed in consideration of the recent understanding of device physics.

Here, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low-voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of OFETs. All model parameters were extracted by a systematic method, and the comparison of the modeled current with the experimental data on pentacene-based OFETs confirmed the validity of the model over a wide operation range.