In this paper results of investigations of Au²⁺ and Ge⁺ ion-implanted silicon samples with the use of the nondestructive frequency and the space domain photo thermal infrared radiometry (PTR) method are presented. Frequency amplitude characteristics and spatial amplitude distributions of the PTR signal for the implanted silicon samples were measured and analyzed. Measurements have been performed for several wavelengths of the exciting light. The dependence of the amplitude of the PTR signal on the optical and recombination parameters of the implanted layers has been analyzed experimentally and theoretically and discussed. The objective of this work is to present the possibilities of investigations of the influence of the high energy and high dose implantation process into silicon on the optical and recombination parameters of implanted silicon with the use of the frequency and spatial domain PTR method. Observed changes in the measured signal have been explained by simultaneous changes of values of the optical absorption coefficient and carriers lifetime of implanted layers.

This paper describes the design and optimisation of the photoacoustic (PA) cell for nondestructive PA spectroscopy. The results of numerical calculations of the acoustic properties of the PA cell are compared with experimental measurements with respect to the frequency response and the quality factor of the cell. The method of designing and optimising of the PA cell is presented. Advantages and disadvantages of this study are discussed.

Photothermal spectroscopy has found a wide range of applications as a method of monitoring thermal, optical and recombination parameters of semiconductors. We consider microphone detection, widely used in photoacoustic spectroscopy, and piezoelectric detection. Both methods require knowledge of the temperature distribution in the sample and in its surroundings, the support surface and gas. For the microphone signal, we simulated the temperature at one of the sample surfaces; for the piezoelectric signal, we simulated the spatial temperature distribution orthogonal to the sample surface. We modeled an idealized semiconducting sample and one with surface defects. We found that the amplitude and phase spectra vary between the methods, enabling determination of optical and thermal parameters.

The photoacoustic cell is the heart of the nondestructive photoacoustic method. This article presents a new simple lumped-components CRLC model of the Helmholtz type photoacoustic cell. This model has been compared with the well known literature models describing the Helmholtz type cells for photoacoustic spectroscopy. Experimental amplitude and phase frequency data obtained for the two photoacoustic cells have been presented and interpreted in a series of models. Results of the fitting of theoretical curves, obtained in these models, to the experimental data have been shown and discussed.

This paper presents experimental results that characterize implanted layers in silicon being the result of a high energy implantation of O ?6 ions. We propose a simple relation between attenuation of photothermal radiometry and/ or modulated free carrier absorption amplitudes, the implanted layer thickness and its optical absorption coefficient. The thickness of the implanted layers was determined from capacitance-voltage characteristics and computations with the TRIM program. The obtained results allowed to estimate changes of the optical absorption coefficient of the oxygen implanted layers indicating the amorfization of the layers.