Self-powered photodetectors, operating without an external power source, have garnered extensive interest for infrared (IR) detection owing to their vast potential in low-power consumption sensor systems. Here, a short-wavelength infrared (SWIR) heterojunction photodetector utilizing semiconducting graphene nanoribbons has been achieved and demonstrated record-high performance. In the self-powered mode, the heterojunction photodetector presents a responsivity of 73.5 A/W and a detectivity of 7.5 × 1014 Jones, surpassing previously reported self-powered IR photodetectors by several orders of magnitude. The superior performance is primarily due to the enhancement of the electric field caused by the photogating effect at the heterointerface. The device also displays unparalleled performance at −5 V bias voltage, achieving a responsivity of 843 A/W, a detectivity of 1015 Jones, and an external quantum efficiency of 105%, all of which are record-breaking values for SWIR photodetectors to date. Therefore, our approach provides new insight and demonstrates great potential for future high-performance low-power consumption IR detection technology.

Self-powered photodetectors which operate without external power sources hold immense promise in future photodetection systems. To achieve high-performance self-powered optoelectronic devices, efficient electron-hole pair separation is critical to generate high photocurrents. In this work, we successfully synthesized semiconducting graphene nanoribbons (GNRs) with a direct bandgap of 1.80 eV and employed them to construct a high-performance GNR/Al ₂ O ₃ /IGZO heterostructure photodetector. The built-in electric field in the heterojunctions enables this photodetector to exhibit remarkable performance, showing a responsivity of up to 68 mA/W, a detectivity of 8.34 × 10 ¹⁰ Jones, and rapid response times of 21/20 ms at zero bias. Furthermore, the photodetector features a wide spectral detection range of 405 to 1550 nm. These results highlight the promising potential of GNR/IGZO p-n heterojunction-based self-powered photodetectors in optoelectronic applications.

Graphene nanoribbons (GNRs) inherit the exceptional carrier mobility of graphene while offering tunable bandgaps, making them promising for high-performance optoelectronics. Here, we report a high-performance near-infrared photodetector based on a p-GNR/Al₂O₃/n-Si vertical heterojunction, where GNR is directly produced by dissociating double-walled carbon nanotubes (DWCNTs). The 10 nm Al₂O₃ interlayer serves as an effective barrier and passivation layer, suppressing dark current and enhancing interfacial charge separation. Under 1064 nm illumination, the device delivers outstanding performance. At −6 V bias, the responsivity and detectivity reach 159.55 A/W and 2.01 × 10¹² Jones, respectively. Notably, under zero-bias self-powered mode, it still achieves a high responsivity of 8.71 A/W, a detectivity of 1.15 × 10¹³ Jones, and a fast response time of 307.5 μs. These results fully validate the feasibility of GNR-based heterojunctions for high-performance optoelectronic devices and pave the way for their future integration into low-power, high-sensitivity photodetection systems and next-generation optoelectronic integrated circuits.

Herein, the energy dispersion relationship and the density of states of triangular and rectangular moiré patterns are investigated using a tight binding model. Their characteristics of Hofstadter butterflies under different magnetic fields are also examined. The results indicate that, by analyzing different moiré superlattices, Hofstadter butterflies arising from different moiré pattern structures are obtained, exhibiting considerable fractal characteristics and self-similarities. Moreover, it is also observed that under an alternating magnetic field, the redistribution of electronic states leads to a significant change in the density of states curve, and the Van Hove peak changes with the increase in magnetic field intensity. This study enriches the understanding of the electronic behavior of moiré systems, but it also provides multiple potential application directions for future technological development.