Pedram Khakbaz received his M.Sc. degree in Micro and Nano-Electronics Engineering in 2018. During his master’s studies, he worked in the Computational Nanoelectronics Laboratory. He obtained his Ph.D. in Industrial and Information Engineering from the University of Udine, Italy, with doctoral research on physics-based modeling and electronic transport in two-dimensional semiconductor devices. In June 2022, he joined the Institute for Microelectronics, TU Wien, where he is currently a Research Fellow. His research focuses on the physical modeling and numerical simulation of novel ultra-scaled semiconductor devices, with particular emphasis on two-dimensional semiconductors. His research interests include carrier scattering and mobility, quantum transport, metal–semiconductor contacts, and semiconductor–dielectric interfaces. He employs first-principles electronic-structure and lattice-dynamics calculations, nonequilibrium Green’s function methods, and Boltzmann and Monte Carlo transport approaches to investigate the influence of material properties, electron–phonon interactions, and dielectric environments on electronic transport. His current work also addresses contact resistance, gate-stack electrostatics, and the performance and reliability of ultra-scaled field-effect transistors.