Memory and logic in the same device: Future artificial intelligence applications and data-intensive computations require the development of neuromorphic systems beyond traditional heterogeneous device architectures. Physical separation between a peripheral signal-processing unit and a memory-operating unit is one of the main bottlenecks of heterogeneous architectures, blocking further improvements in efficient resistance matching, energy consumption, and integration compatibility. Tong et al . present a transistor-memory architecture based on a homogeneous tungsten selenide-on-lithium niobate device array (see the Perspective by Rao and Tao). Analog peripheral signal preprocessing and nonvolatile memory were possible within the same device structure, promising diverse neuromorphic functionalities and offering potential improvements in neuromorphic systems on-chip. —YS

Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development of highly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.

The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO₂ has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the composition and structure of conductive filaments, and especially the evolution of conductive filament surroundings, remain controversial in HfO₂-based memristors. Here, the conductive filament system in the amorphous HfO₂-based memristors with various top electrodes is revealed to be with a quasi-core-shell structure consisting of metallic hexagonal-Hf₆O and its crystalline surroundings (monoclinic or tetragonal HfO_x). The phase of the HfO_x shell varies with the oxygen reservation capability of the top electrode. According to extensive high-resolution transmission electron microscopy observations and ab initio calculations, the phase transition of the conductive filament shell between monoclinic and tetragonal HfO₂ is proposed to depend on the comprehensive effects of Joule heat from the conductive filament current and the concentration of oxygen vacancies. The quasi-core-shell conductive filament system with an intrinsic barrier, which prohibits conductive filament oxidation, ensures the extreme scalability of resistive switching memristors. This study renovates the understanding of the conductive filament evolution in HfO₂-based memristors and provides potential inspirations to improve oxide memristors for nonvolatile storage-class memory applications.

Ion transport and hydrodynamic flow through nanometer-sized channels (nanopores) have been increasingly studied owing to not only the fundamental interest in the abundance of novel phenomena that has been observed but also their promising application in innovative nanodevices, including next-generation sequencers, nanopower generators, and memristive synapses. We first review various kinds of materials and the associated state-of-the-art processes developed for fabricating nanoscale pores, including the emerging structures of DNA origami and 2-dimensional nanopores. Then, the unique transport phenomena are examined wherein the surface properties of wall materials play predominant roles in inducing intriguing characteristics, such as ion selectivity and reverse electrodialysis. Finally, we highlight recent progress in the potential application of nanopores, ranging from their use in biosensors to nanopore-based artificial synapses.