With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation‐induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation‐hardening techniques. The ultimate goal is to bolster the reliability and stability of these devices under extreme conditions. The review initiates by outlining the spectrum of radiation environments that microelectronic devices may confront, encompassing space radiation, nuclear explosion radiation, laboratory radiation, and process radiation. It also delineates the potential damage types that these environments can inflict upon microelectronic devices. Furthermore, the review elaborates on the underlying mechanisms through which different radiation environments impact the performance of microelectronic devices, which includes a detailed analysis of the characteristics and fundamental mechanisms of damage when microelectronic devices are subjected to total ionizing dose effects and single‐event effects. In addition, the review delves into the promising application prospects of several key radiation‐hardening techniques for enhancing the radiation tolerance of microelectronic devices.

This paper aims to address the challenges of short optical communication distances and high Bit Error Rates (BERs) caused by seawater absorption, scattering, and underwater turbulence. This paper establishes an optical communication channel model based on the Monte Carlo method and simulates and analyzes the process of received optical power attenuation when light is transmitted underwater due to absorption and scattering. The simulation model focuses on the influence of seawater type, transmission distance, receiver position, and angle on the received optical power attenuation. The results of this simulation will provide theoretical support for the development of prototype underwater optical communication systems and experiments in complex environments. To solve the long-range weak signal reception and processing issues in underwater optical wireless communication systems, this paper proposes the design and implementation of an underwater optical wireless communication system using optimized on-off keying high-power light-emitting diode/laser diode modulation technology and avalanche photodiode (APD)/photomultiplier (PMT) receiver modules. In addition, this paper describes the design of the underwater optical communication host computer software, which provides functions such as mode selection, BER monitoring, and file transfer. To test the performance of the proposed system, this paper conducts experiments in a 35 m long pool, fixed platform, and underwater mobile platform, as well as cross-air-water interface optical communication performance test experiments in a complex hydrological environment. The results show that the system achieved a 35 m underwater medium communication distance, transmission rate of 5–20 Mbps, and cross-domain wireless optical communication function under the condition of a BER of less than 10−6. The experiments also revealed that the communication distance decreases as the turbidity of the water body increases and the PMT receiver module selected at the receiver end has a longer communication distance than the APD receiver module. Overall, this paper demonstrates the feasibility of the proposed technology for underwater optical communication systems in complex waters, providing theoretical and data support for the next engineering practice.

This article reviews the properties and formation process of interface traps in MOS and linear bipolar devices. Transistors are the core components of modern electronic devices, and their performance and reliability directly affect the performance of the entire system. In radiation environments, the emergence and evolution of interface traps severely impacts the functionality of transistors, being a significant factor in device failure. However, our understanding of the properties and formation processes of interface traps is still limited. Therefore, research on interface traps is of great theoretical and practical significance. This paper focuses on studying the radiation response patterns of transistor interface traps. By reviewing relevant literature and research findings from both domestic and international sources, this review provides a detailed overview of the current state of research on the transformation of interface traps and the annealing processes that occur during the irradiation of microelectronic devices. Finally, based on this foundation, this paper discusses the current state of simulation research methods for interface traps. Through an in-depth exploration of the formation mechanisms of interface traps and their role in transistor performance, this study aims to provide guidance for device design, radiation hardening, and reliability assessment, and ensure the reliability and stability of devices in radiation environments.

In an ionizing radiation environment, the formation of interface traps affects transistor performance, which may lead to device failure. This article reviews interface trap formation mechanisms in silicon-based devices. It explores interface trap types, electrical properties, and their impacts on devices’ performance. Finally, the main factors affecting the formation of interface traps are summarized. By reviewing these issues and exploring future research directions, guidance will be provided for the design of radiation-resistant devices to enhance their reliability in irradiated environments.