Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.
The synthesis and performance of a cost-effective mixed fullerene at the 100+ g scale with a reaction yield of 85% is demonstrated. The cost to convert a fullerene such as C60 into the mixed acceptor blend is less than $1 g−1. The photovoltaic performance of the mixed acceptor is demonstrated in both small scale and roll-to-roll printed devices.
This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of graphite nanoparticles in a rubber matrix into the multilayer nanostructure of a printed organic thin film transistor. This printed device was able to convert shock wave inputs rapidly and reproducibly into an inherently amplified electronic output signal. Variation of the organic ink material, solvents, and printing speeds were shown to modulate the multilayer nanostructure of the organic semiconducting and dielectric layers, enabling tuneable optimisation of the transistor response. The optimised printed device exhibits rapid switching from a non-conductive to a conductive state upon application of low pressures whilst operating at very low source-drain voltages (0–5 V), a feature that is often required in applications sensitive to stray electromagnetic signals but is not provided by conventional inorganic transistors and switches. The printed sensor also operates without the need for any gate voltage bias, further reducing the electronics required for operation. The printable low-voltage sensing and signalling system offers a route to simple low-cost assemblies for secure detection of stimuli in highly energetic systems including combustible or chemically sensitive materials.
The performance of poly(3-hexylthiophene) (P3HT): phenyl-C61-butyric acid methyl ester (PCBM) organic photovoltaic (OPV) devices was found to be strongly influenced by environmental during preparation, thermal annealing conditions, and the material blend composition. We optimized laboratory fabricated devices for these variables. Humidity during the fabrication process can cause electrode oxidation and photo-oxidation in the active layer of the OPV. Thermal annealing of the device structure modifies the morphology of the active layer, resulting in changes in material domain sizes and percolation pathways which can enhance the performance of devices. Thermal annealing of the blended organic materials in the active layer also leads to the growth of crystalline for P3HT domains due to a more arrangement packing of chains in the polymer. Poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) acts as a hole transport layer in these P3HT:PCBM devices. Two commercially materials of PEDOT:PSS were utilizing in the optimization of the OPV in this research; high conductivity PEDOT:PSS-PH1000 and PEDOT:PSS-Al4083, which is specifically designed for OPV interfaces. It was demonstrated that OPVs were prepared with PEDOT:PSS-PH1000 have a less than the average performance of PEDOT:PSS-Al4083. The power conversion efficiency (PCE) decreased clearly with a reducing in masking area devices from 5 mm2 to 3.8 mm2 for OPVs based on PH1000 almost absolutely due to the reduced short circuit current (Jsc). This work provides a roadmap to understanding P3HT:PCBM OPV performance and outlines the preparation issues which need to be resolved for efficient device fabrication
A series of modified tetraphenylporphyrins varying only in the electron-donating or electron-withdrawing character of the substituents in the para-phenyl position have been blended into the active layer of MEH-PPV:PCBM bulk heterojunction solar cells. Increasing the electron-withdrawing ability of the substituents, as quantified by the Hammett constant, systematically alters the device efficiency of ternary poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene]:porphyrin:[6,6]-phenylC61-butyric acid methyl ester (MEH-PPV:porphyrin:PCBM) bulk heterojunction organic solar cells through alteration of the HOMO/LUMO levels and, thereby, the open-circuit voltage of the cell. We show that the porphyrin concentrates at the MEH-PPV:PCBM interface in these blends and that the devices operate via a cascade mechanism when the highest occupied molecular orbital (HOMO) of the porphyrin is higher in energy that that of MEH-PPV, but via a parallel/alloy device mechanism, when the HOMO of the porphyrin is lower in energy than that of MEH-PPV. As such, this work highlights how the energetics of the ternary component can determine device performance by switching between charge generation models simply by altering the electron-withdrawing character of the porphyrin ternary additive.