It is extraordinarily challenging to implement adaptive and seamless interactions between mechanical triggering and current silicon technology for tunable electronics, human-machine interfaces, and micro/nanoelectromechanical systems. Here, we report Si flexoelectronic transistors (SFTs) that can innovatively convert applied mechanical actuations into electrical control signals and achieve directly electromechanical function. Using the strain gradient–induced flexoelectric polarization field in Si as a “gate,” the metal-semiconductor interfacial Schottky barriers’ heights and the channel width of SFT can be substantially modulated, resulting in tunable electronic transports with specific characteristics. Such SFTs and corresponding perception system can not only create a high strain sensitivity but also identify where the mechanical force is applied. These findings provide an in-depth understanding about the mechanism of interface gating and channel width gating in flexoelectronics and develop highly sensitive silicon-based strain sensors, which has great potential to construct the next-generation silicon electromechanical nanodevices and nanosystems.

Two‐dimensional (2D) ferroelectric semiconductors, as an emerging class of functional materials, attract considerable interest in nanoelectronics, spintronics, and optoelectronics, owing to their unique ability to combine ferroelectricity and semiconducting properties at the ultimate thickness limit. This review provides a comprehensive overview of the development, fundamental mechanisms, and recent advances of 2D ferroelectric semiconductors. The origins and unique characteristics of 2D ferroelectricity are discussed, and representative intrinsic 2D ferroelectric semiconductors as well as extrinsic systems are summarized. The potential applications of these materials in electronics, optoelectronics, spintronics, and valleytronics are discussed in detail. Finally, the key challenges facing the field are outlined, and perspectives on future directions are offered. This review aims to provide a systematic reference for both fundamental studies and technological development, fostering the advancement of 2D ferroelectric semiconductors toward high‐performance and multifunctional device applications.

Driven by the rapid evolution of flexible electronics, rehabilitation healthcare is shifting toward devices that seamlessly interface with human body. Yet, existing solutions often simply layer flexible sensor units over rigid components, making it difficult to combine high elasticity, mechanical robustness, and true imperceptibility. Here, we are pioneering a super‐tough (∼54.7 MPa) and highly stretchable (>400% strain) triboelectric webbing (T‐webbing) that overcomes this long‐standing trade‐off through the synergistic integration of an embedded textured architecture and functional elastic yarns. The T‐webbing supports mass customization, exhibits outstanding electrical durability (>100 000 cycles), and enables reliable self‐powered sensing capability with tunable mechanical properties for diverse rehabilitation tasks. In a proof‐of‐concept demonstration, the T‐webbing is seamlessly integrated into a machine‐learning‐enabled lower‐limb rehabilitation platform, achieving a motion recognition accuracy of 97.9% while enabling seamless one‐click data sharing, intuitive human–machine interaction, and real‐time remote guidance. By bridging high mechanical resilience with imperceptible wearability, our study offers a brand‐new solution for data‐driven, high‐compliance, home‐based rehabilitation within the Internet‐of‐Things ecosystem—addressing a pressing clinical need for scalable, patient‐friendly solutions.

We report an ion-gel-gated amorphous indium gallium zinc oxide (a-IGZO) optoelectronic neuromorphic transistors capable of synaptic emulation in both photoelectric dual modes. The ion-gel dielectric in the coplanar-structured transistor, fabricated via ink-jet printing, exhibits excellent double-layer capacitance (>1 μF/cm²) and supports low-voltage operation through lateral gate coupling. The integration of ink-jet printing technology enables scalable and large-area fabrication, highlighting its industrial feasibility. Electrical stimulation-induced artificial synaptic behaviors were successfully demonstrated through ion migration in the gel matrix. Through a simple and controllable oxygen vacancy engineering process involving low-temperature oxygen-free growth and post-annealing process, a sufficient density of stable subgap states was generated in IGZO, extending its responsivity spectrum to the visible-red region and enabling wavelength-discriminative photoresponses to 450/532/638 nm visible light. Notably, the subgap states exhibited unique interaction dynamics with low-energy photons in optically triggered pulse responses. Critical synaptic functionalities—including short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse facilitation (PPF)—were successfully simulated under both optical and electrical stimulations. The device achieves low energy consumption while maintaining compatibility with flexible substrates through low-temperature processing (≤150 °C). This study establishes a scalable platform for multimodal neuromorphic systems utilizing printed iontronic architectures.

Gallium nitride semiconductors are essential for advanced electronics, but realizing their potential requires robust normally-off devices. The P-GaN gate high-electron-mobility transistor is the dominant architecture, yet its threshold voltage is restricted to less than 2 volts by the low activation efficiency of magnesium acceptors. Here, we demonstrate atomically confined insertion to overcome this bottleneck. This technique creates self-terminating, two-dimensional magnesium layers within a complex heterostructure, inducing localized strain and polarity inversion. The resulting atomic-scale polarization fields increase the average effective hole concentration several-fold. When integrated into a P-GaN gate high-electron-mobility transistor, atomically confined insertion boosts the threshold voltage from 1.5 to 4.3 volts while mitigating the degradation in transconductance and output current typical of conventional methods. Furthermore, this approach substantially suppresses the current collapse effect via an efficient vertical hole injection mechanism. This work establishes atomic-scale field engineering as a viable axis for performance control and optimization in semiconductor devices.