We demonstrate the possibility of producing Au/SiO(2) core-shell nanoparticles by nanosecond laser irradiation of thin (5 and 20 nm) Au films on Si. The Au/Si eutectic reaction and dewetting process caused by the fast melting and solidification dynamics induced by the nanosecond laser irradiations are investigated as the origin of the formation of core-shell nanoparticles. Using several microscopic techniques (Rutherford backscattering spectrometry, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and energy filtered transmission electron microscopy) the formation and evolution of the core-shell structures are investigated as a function of the laser fluence in the 500-1500 mJ cm(-2) range for both film thicknesses. In particular, the mean height and diameter and surface density evolution of the core-shell structures are quantified and correlated to the laser fluence and Au film thickness.

A new concept concerning dielectric engineering is presented in this study aiming at a net improvement of the performance of dielectric layers in RF MEMS capacitive switches with electrostatic actuation and an increase of their reliability. Instead of synthesis of new dielectric materials, we have developed a new class of dielectric layers that gain their performance from design rather than from composition. Two kinds of nanostructured dielectrics are presented. They consist of 1) silicon oxynitride layers (SiOxNy:H) with gradual variation of their properties (discrete or continuous) and 2) organosilicon (SiOxCy:H) and/or silica (SiO 2) layers with tailored interfaces; a single layer of silver nanoparticles (AgNPs) is embedded in the vicinity of the dielectric free surface. The nanostructured dielectric layers were deposited in a plasma process. They were structurally characterized and tested under electrical stress and environmental conditions typical for RF MEMS operation. The charge injection and decay dynamics were probed by Kelvin force microscopy. Modulation of the conductive properties of the nanostructured layers over seven orders of magnitude is achieved. Compared to dielectric monolayers, the nanostructured ones exhibit much shorter charge retention times. They appear to be promising candidates for implementation in RF MEMS capacitive switches with electrostatic actuation, and more generally for applications where surface charging must be avoided.