Metal oxides are of great technological importance in environmental remediation and electronics because of their capability to generate charge carriers when stimulated with required amount of energy. The promising arrangement of electronic structure, light absorption properties, and charge transport characteristics of most of the metal oxides has made possible its application as photocatalyst. In this article definition of metal oxides as photocatalyst, structural characteristics, requirements of the photocatalyst, classification of photocatalysts and the mechanism of the photocatalytic process are discussed

The alcoholic extracts of eight plants namely Lycium shawii, Teucrium oliverianum, Ochradenus baccatus, Anvillea garcinii, Cassia italica, Artemisia sieberi, Carthamus tinctorius, and Tripleurospermum auriculatum grown in Saudi Arabia were studied for their corrosion inhibitive effect on mild steel in 0.5M HCl media using the open circuit potential (OCP), Tafel plots and A.C. impedance methods. All the plant extracts inhibited the corrosion of mild steel in acidic media through adsorption and act as mixed-type inhibitors

The vast difference in timescale of carrier transport detected in perovskite solar cells is associated with different kinetics processes involving electron, defects and large cations, which determines the device performance and I–V hysteresis.

An investigation of the kinetic behavior of MAPbI₃ memristors shows that the onset voltage to a high conducting state depends strongly on the voltage sweep rate, and the impedance spectra generate complex capacitive and inductive patterns. We develop a dynamic model to describe these features and obtain physical insight into the coupling of ionic and electronic properties that produce the resistive switching behavior. The model separates the memristive response into distinct diffusion and transition-state-formation steps that describe well the experimental current–voltage curves at different scan rates and impedance spectra. The ac impedance analysis shows that the halide perovskite memristor response contains the composition of two inductive processes that provide a huge negative capacitance associated with inverted hysteresis. The results provide a new approach to understand some typical characteristics of halide perovskite devices, such as the inductive behavior and hysteresis effects, according to the time scales of internal processes.