Terahertz technology has demonstrated immense potential across a wide range of applications, particularly in the realm of THz photodetection. However, state-of-the-art detectors typically face fundamental trade-offs among sensitivity, response speed, operating temperature, and spectral bandwidth. While previous studies have shown that graphene field-effect transistors (GFETs) exhibit a broadband, room-temperature photoresponse to THz radiation—often attributed to photothermoelectric (PTE) and plasma-wave rectification effects—the similar functional dependence of these mechanisms on the gate voltage has historically made it challenging to disentangle their individual contributions. In this study, we leverage monolayer graphene as the photoactive material to overcome these limitations within a single device architecture. We present a novel THz photodetector driven predominantly by the PTE effect, facilitated by a precisely designed counterclockwise spiral antenna. The demonstrated device achieves exceptional room-temperature sensitivity, featuring a minimum noise equivalent power (NEP) of 80.7 $\mathrm{p}\mathrm{W}/\sqrt{\mathrm{H}\mathrm{z}}$ alongside a rapid response time of less than 11 μs. Furthermore, by systematically analyzing the temporal response dynamics, we unambiguously identify the PTE effect as the dominant operating mechanism. These results provide a robust strategy for the development of high-performance, room-temperature THz optoelectronics, paving the way for advanced practical applications in high-capacity wireless communications and real-time THz imaging.

This study systematically investigates the effects of trap concentration on self-heating and terahertz (THz) responses in GaN HEMTs using Sentaurus TCAD. Traps, inherently unavoidable in semiconductors, can be strategically introduced to engineer specific energy levels that establish competitive dynamics between the electron momentum relaxation time and the carrier lifetime. A simulation-based exploration of this mechanism provides significant scientific value for enhancing device performance through self-heating mitigation and THz response optimization. An AlGaN/GaN heterojunction HEMT model was established, with trap concentrations ranging from 0 to $5\times {10}^{17} {\mathrm{c}\mathrm{m}}^{-3}$. The analysis reveals that traps significantly enhance channel current (achieving 3× gain at $1\times 10^{17} {\mathrm{c}\mathrm{m}}^{-3}$) via new energy levels that prolong carrier lifetime. However, elevated trap concentrations (>$1\times {10}^{16} {\mathrm{c}\mathrm{m}}^{-3}$) exacerbate self-heating-induced current collapse, reducing the min-to-max current ratio to 0.9158. In THz response characterization, devices exhibit a distinct DC component (${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$) under non-resonant detection ($\mathsf{\omega }\mathsf{\tau }\ll 1$). At a trap concentration of $1\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ peaks at $0.12 \mathrm{V}$ when ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-7.8 \mathrm{V}$. Compared to trap-free devices, a maximum response attenuation of 64.89% occurs at ${\mathrm{V}}_{\mathrm{g}}\mathrm{D}\mathrm{C}=-4.9 \mathrm{V}$. Furthermore, ${\mathrm{U}}_{\mathrm{d}\mathrm{c}}$ demonstrates non-monotonic behavior with concentration, showing local maxima at $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ and $7\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$, attributed to plasma wave damping and temperature-gradient-induced electric field variations. This research establishes trap engineering guidelines for GaN HEMTs: a concentration of $4\times {10}^{15} {\mathrm{c}\mathrm{m}}^{-3}$ optimally enhances conductivity while minimizing adverse impacts on both self-heating and the THz response, making it particularly suitable for high-sensitivity terahertz detectors.