Väino Sammelselg

Prof. Väino Sammelselg

Professor of Inorganic Chemistry, Head of Chair, Institute of Chemistry, and Head of Department of Materials Science, Institute of Physics, Faculty of Science and Technology, University of Tartu, Tartu, Estonia
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Research Focus & Metrics

Academic Career Length

46Years (1981-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 March 1995 in Journal of Crystal Growth
Verified
Journal Article
Closed access
JAJaan Aarik
Jaan Aarik
AAAleks Aidla
Aleks Aidla
TUTeet Uustare
Teet Uustare
Väino SammelselgVäino Sammelselg
Väino Sammelselg

1 February 1999 in Thin Solid Films
Verified
Journal Article
Closed access
JAJ Aarik
J Aarik
AAA Aidla
A Aidla
AKA.-A Kiisler
A.-A Kiisler
TUT Uustare
T Uustare
Väino SammelselgVäino Sammelselg
Väino Sammelselg

1 August 1997 in Thin Solid Films
Verified
Journal Article
Closed access
JAJaan Aarik
Jaan Aarik
AAAleks Aidla
Aleks Aidla
AKAlma-Asta Kiisler
Alma-Asta Kiisler
TUTeet Uustare
Teet Uustare
Väino SammelselgVäino Sammelselg
Väino Sammelselg

1 January 2004 in Journal of the Electrochemical Society
Verified
Journal Article
Closed access
PDF file
TATitta Aaltonen
Titta Aaltonen
Mikko RitalaMikko Ritala
Mikko Ritala
Väino SammelselgVäino Sammelselg
Väino Sammelselg
MLMarkku Leskelä
Markku Leskelä
Thin films of metallic iridium were grown by atomic layer deposition (ALD) in a wide temperature range of 225-375°C from tris(2,4-pentanedionato)iridium <mml:math display="inline"><mml:mo stretchy="false">[</mml:mo><mml:mi mathvariant="normal">Ir</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi mathvariant="normal">acac</mml:mi><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">]</mml:mo></mml:math>[Ir(acac)3] and oxygen. The films had low resistivity and low impurity contents and good adhesion to the substrate. The film growth rate saturated to a constant value as the precursor pulse times were increased, thus verifying the self-limiting growth mechanism. In addition, the film thickness depended linearly on the number of deposition cycles. The development of the surface morphology with increasing film thickness was studied by atomic force microscopy (AFM). AFM and X-ray reflectivity analysis showed that the films had smooth surfaces. The films showed a preferred (111) orientation as studied by X-ray diffraction. The results show that high-quality iridium films can be grown by ALD. © 2004 The Electrochemical Society. All rights reserved.

1 January 2002 in Micron
Verified
Journal Article
Closed access
EMEnno Merivee
Enno Merivee
APAngela Ploomi
Angela Ploomi
MRMärt Rahi
Märt Rahi
JBJosé Bresciani
José Bresciani
HRHans Peter Ravn
Hans Peter Ravn
Väino SammelselgVäino Sammelselg
Väino Sammelselg

1 March 2017 in Journal of Alloys and Compounds
Verified
Journal Article
Closed access
HKHansang Kwon
Hansang Kwon
JMJayanta Mondal
Jayanta Mondal
KAKhaled A. AlOgab
Khaled A. AlOgab
Väino SammelselgVäino Sammelselg
Väino Sammelselg
MTMiyazaki Takamichi
Miyazaki Takamichi
MLMarc Leparoux
Marc Leparoux