The high quality of crystal growth and advanced fabrication technology of silicon carbide (SiC) in power electronics enables the control of optically active defects in SiC, such as silicon vacancies (V_Si). In this paper, V_Si are generated in hexagonal SiC (4H) samples through ion implantation of nitrogen or (and) aluminum, respectively the n- and p-type dopants for SiC. The presence of silicon vacancies within the samples is studied using cathodoluminescence at 80K. For 4H-SiC samples, the ZPL (zero phonon line) of the V1′ center of V_Si is more intense than the one for the V1 center before annealing. The opposite is true after 900 °C annealing. ZPLs of the divacancy defect (V_CV_Si) are also visible after annealing.

S-shaped dinaphtho[2,1-b:2′,1′-f]thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not fully understood yet. In this study, we first revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory (DFT) simulations, employing the B3LYP functional method and the 6-311G (d, p) basis set. The molecular vibrations identified included C–H bending in alkyl chains and the deformation of S-shaped thiophene rings. In addition, surface-enhanced Raman scattering (SERS) with 785 nm incident light was applied to thermally deposited 25 nm S-DNTT-10 thin films with gold (Au) nanostructures. It showed enhanced Raman signals from the lower S-DNTT-10 layers. The findings significantly contribute to the knowledge of S-DNTT-10 molecular properties and also contribute insights into using this material into organic electronic devices in the future.

The S-shaped dinaphtho[2,1-b:2′,1′-f] thieno[3,2-b]thiophene (S-DNTT) molecules have shown promise for applications in organic electronic devices, though their molecular characteristics are not yet fully understood. In this study, it firstly revealed the material characteristics of S-DNTT-10 by vibrational dynamics using Raman spectroscopy and density functional theory (DFT) simulations with employing B3LYP functional method and the 6-311G (d, p) basis set. The molecular vibrations identified include C-H bending in alkyl chains and deformation of S-shaped thiophene rings. Additionally, it suggested that surface-enhanced Raman scattering (SERS) with 785 nm incident light was applied to thermally deposited 25 nm S-DNTT-10 thin-films with gold (Au) nanostructures. It illustrated the enhancing Raman signals from the lower S-DNTT-10 layers. The findings significantly contribute to the knowledge of S-DNTT-10 molecular properties and using this material into organic electronic devices in the future.