Doron Shilo

Dr. Doron Shilo

Laboratory for Nano and Micro Mechanics of Materials, Department of Mechanical Engineering Technion, Israel Institute of Technology, Haifa 32000, Israel

Research Focus & Metrics

Academic Career Length

30Years (1997-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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15 April 2000 in Physical Review B
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EBE. Berkowicz
E. Berkowicz
DGD. Gershoni
D. Gershoni
GBG. Bahir
G. Bahir
ELE. Lakin
E. Lakin
Doron ShiloDoron Shilo
Doron Shilo
LCL. A. Coldren
L. A. Coldren
We apply photoluminescence, photoluminescence excitation, and time-resolved optical spectroscopy for studying a set of InxGa1−xN/GaN periodic structures, which were characterized by high-resolution x-ray diffraction including x-ray mapping in reciprocal space. We found that the energy differences between the absorption edge and the photoluminescence peak (Stokes shift), and the photoluminescence decay time drastically increase with the InxGa1−xN layer thickness. The decay time strongly increases with the sample temperature. We were able to quite accurately determine the radiative and nonradiative decay times of excitons in these structures by measuring the temperature dependence of the decay times, the integrated photoluminescence intensities, and the photoluminescence intensities immediately after the picosecond excitation pulse. The intrinsic radiative lifetimes, which are inversely proportional to the exciton oscillator strengths, were then calculated from the temperature dependence of the radiative lifetimes. These experimental findings are analyzed using an eight-band k⋅P model, which quantitatively explains both the Stokes shifts and the intrinsic radiative lifetimes. Their strong dependence on the quantum well width is due to a large (∼1 MV/cm) lattice-mismatch strain-induced piezoelectric field along the growth axis.

20 June 2004 in Nature Materials
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Doron ShiloDoron Shilo
Doron Shilo
GRGuruswami Ravichandran
Guruswami Ravichandran
KBKaushik Bhattacharya
Kaushik Bhattacharya

1 May 2011 in Journal of the Mechanics and Physics of Solids
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EFEilon Faran
Eilon Faran
Doron ShiloDoron Shilo
Doron Shilo

1 March 2013 in Journal of the Mechanics and Physics of Solids
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EFEilon Faran
Eilon Faran
Doron ShiloDoron Shilo
Doron Shilo

25 June 2010 in Advanced Functional Materials
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HMHaika Moshe‐Drezner
Haika Moshe‐Drezner
Doron ShiloDoron Shilo
Doron Shilo
ADAvraham Dorogoy
Avraham Dorogoy
EZEmil Zolotoyabko
Emil Zolotoyabko

19 October 1998 in Applied Physics Letters
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EZE. Zolotoyabko
E. Zolotoyabko
Doron ShiloDoron Shilo
Doron Shilo
WSW. Sauer
W. Sauer
EPE. Pernot
E. Pernot
JBJ. Baruchel
J. Baruchel
X-ray topographs under acoustic wave excitation were taken from LiNbO3-based surface acoustic wave devices with He-implanted waveguide layers, using monochromatized synchrotron radiation from the European Synchrotron Radiation Facility (ESRF), Grenoble. Measurements were performed in the stroboscopic mode, i.e., by synchronizing the electron bunch frequency with the resonant frequency of the acoustic wave excitation in the 300 MHz range. These x-ray diffraction images showed plane acoustic wave propagation through the LiNbO3 crystals as well as a weak wavefront distortion due to the scattering on dislocation deformation fields. In some images secondary spherical waves were observed as a result of the strong acoustic wave interaction with the submicron size density perturbations.