The Helmholtz-Zentrum Dresden-Rossendorf operates a superconducting linear accelerator for electrons with energies up to 35 MeV and average beam currents up to 1.6 mA with bunch charges up to 120 pC. The electron beam is employed to produce several secondary beams including X-rays from bremsstrahlung production, coherent IR light in a Free Electron Laser, superradiant THz radiation, neutrons, and positrons. The secondary positron beam after moderation feeds the Monoenergetic Positron Source (MePS) where positron annihilation lifetime (PALS) and positron annihilation Doppler-broadening experiments in materials science are performed. The adjustable repetition rate of the continuous-wave electron beams allows matching of the pulse separation to the positron lifetime in the sample under study. The energy of the positron beam can be set between 0.5 keV and 20 keV to perform depth resolved defect spectroscopy and porosity studies especially for thin films. Bulk materials, fluids, gases, and even radioactive samples can be studied at the unique Gamma-induced Positron Source (GiPS) where an intense bremsstrahlung source generates positrons directly inside the material under study. A ²²Na-based monoenergetic positron beam serves for offline experiments and additional depth-resolved Doppler-broadening studies complementing both accelerator-based sources.

On the basis of the design and construction of the slow positron beam SPONSOR at the Helmholtz-Centre Dresden-Rossendorf an example is given how to build-up a simple slow positron beam for solid surface investigations within a short time and without high financial costs. The system uses a ²²Na source and consists of three main parts: (1) the source chamber with a thin film tungsten moderator used in transmission, and a pre-accelerator stage, (2) the vacuum system with magnetic transport, a bent tube for energy selection and an accelerator, (3) the sample chamber with a sample holder, Ge detectors and (4) facilities for remote control and data acquisition. These parts are described in detail. The paper is preferentially addressed to beginners in the field of slow positron beam techniques and other readers being generally interested in positron annihilation spectroscopy.

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-Ga₂O₃, an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10⁻⁴ Ω.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga₂O₃ lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy measurements confirm this finding and the interpretation of the experimental results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time, it demonstrates for the first time p-type and remarkable n-type conductivity in Ga₂O₃ which should usher in the development of Ga₂O₃ devices and advance optoelectronics and high-power devices.

Antiferromagnetic insulators are a prospective materials platform for magnonics, spin superfluidity, THz spintronics, and non-volatile data storage. A magnetomechanical coupling in antiferromagnets offers vast advantages in the control and manipulation of the primary order parameter yet remains largely unexplored. Here, we discover a new member in the family of flexoeffects in thin films of Cr₂O₃. We demonstrate that a gradient of mechanical strain can impact the magnetic phase transition resulting in the distribution of the Néel temperature along the thickness of a 50-nm-thick film. The inhomogeneous reduction of the antiferromagnetic order parameter induces a flexomagnetic coefficient of about 15 μ_B nm⁻². The antiferromagnetic ordering in the inhomogeneously strained films can persist up to 100 °C, rendering Cr₂O₃ relevant for industrial electronics applications. Strain gradient in Cr₂O₃ thin films enables fundamental research on magnetomechanics and thermodynamics of antiferromagnetic solitons, spin waves and artificial spin ice systems in magnetic materials with continuously graded parameters.

Magnetic phase transition in the Fe₆₀Al₄₀ transition metal aluminide from the ferromagnetic disordered A2-phase to the paramagnetic ordered B2-phase as a function of annealing up to 1000 °C has been investigated by means of magneto-optical and spectroscopy techniques, i.e., Kerr effect, positron annihilation, and Mössbauer spectroscopy. The positron annihilation spectroscopy has been performed in-situ sequentially after each annealing step at the Apparatus for In-situ Defect Analysis that is a unique tool combining positron annihilation spectroscopy with temperature treatment, material evaporation, ion irradiation, and sheet resistance measurement techniques. The overall goal was to investigate the importance of the open volume defects onto the magnetic phase transition. No evidence of variation in the vacancy concentration in matching the magnetic phase transition temperature range (400–600 °C) has been found, whereas higher temperatures showed an increase in the vacancy concentration.

Electric-field controlled magnetism can boost energy-efficiency in widespread applications. However, technologically, this effect is facing important challenges: mechanical failure in strain-mediated piezoelectric/magnetostrictive devices, dearth of room-temperature multiferroics or stringent thickness limitations in electrically-charged metallic films. Voltage-driven ionic motion (magneto-ionics) circumvents most of these drawbacks while exhibiting interesting magnetoelectric phenomena. Nevertheless, magneto-ionics typically requires heat-treatments and multi-component heterostructures. Here we report on the electrolyte-gated and defect-mediated O and Co transport in a Co₃O₄ single layer which allows for room-temperature voltage-controlled ON-OFF ferromagnetism (magnetic switch) via internal reduction/oxidation processes. Negative voltages partially reduce Co₃O₄ to Co (ferromagnetism: ON), resulting in graded films including Co- and O-rich areas. Positive bias oxidizes Co back to Co₃O₄ (paramagnetism: OFF). This electric-field-induced atomic-scale reconfiguration process is compositionally, structurally and magnetically reversible and self-sustained since no oxygen source other than the Co₃O₄ itself is required. This process could lead to electric-field-controlled device concepts for spintronics.