A full renormalization of the inert doublet model is presented and exploited for a precise calculation of the relic density of dark matter (DM) at one-loop. In this first paper, we study the case of a DM candidate with $m_{\mathrm{DM}}\sim 500\mathrm{GeV}$. In this regime, the coannihilation channels are important. We therefore compute, for a wide range of relative velocities, the full next-to-leading order electroweak corrections to seven annihilation/coannihilation processes that contribute $\sim 70\%$ to the relic density of DM. These corrected cross sections are interfaced with micromegas to obtain the one-loop correction to the freeze-out relic density. Due to the accurate measurement of this observable, the one-loop corrections are relevant. We discuss the one-loop renormalization scheme dependence and point out the influence, at one-loop, of a parameter that solely describes the scattering in the dark sector. A tree-level computation of the relic density is not sensitive to this parameter.

Semiconductors that can provide optical gain at extremely low carrier density levels are critically important for applications such as energy efficient nanolasers. However, all current semiconductor lasers are based on traditional semiconductor materials that require extremely high density levels above the so-called Mott transition to realize optical gain. The new emerging 2D materials provide unprecedented opportunities for studying new excitonic physics and exploring new optical gain mechanisms at much lower density levels due to the strong Coulomb interaction and co-existence and mutual conversion of excitonic complexes. Here, we report a new gain mechanism involving charged excitons or trions in electrically gated 2D molybdenum ditelluride well below the Mott density. Our combined experimental and modelling study not only reveals the complex interplay of excitonic complexes well below the Mott transition but also establishes 2D materials as a new class of gain materials at densities 4–5 orders of magnitude lower than those of conventional semiconductors and provides a foundation for lasing at ultralow injection levels for future energy efficient photonic devices. Additionally, our study could help reconcile recent conflicting results on 2D materials: While 2D material-based lasers have been demonstrated at extremely low densities with spectral features dominated by various excitonic complexes, optical gain was only observed in experiments at densities several orders of magnitude higher, beyond the Mott density. We believe that our results could lead to more systematic studies on the relationship between the mutual conversion of excitonic species and the existence of optical gain well below the Mott transition.

Monolayer 2D semiconductors provide an attractive option for valleytronics due to valley-addressability. But the short valley-polarization lifetimes for excitons have hindered potential valleytronic applications. In this paper, we demonstrate a strategy for prolonging the valley-polarization lifetime by converting excitons to trions through efficient gate control and exploiting the much longer valley-polarization lifetimes for trions than for excitons. At charge neutrality, the valley lifetime of monolayer MoTe₂ increases by a factor of 1000 to the order of nanoseconds from excitons to trions. The exciton-to-trion conversion changes the dominant depolarization mechanism from the fast electron-hole exchange for excitons to the slow spin-flip process for trions. Moreover, the degree of valley polarization increases to 38% for excitons and 33% for trions through electrical manipulation. Our results reveal the depolarization dynamics and the interplay of various depolarization channels for excitons and trions, providing an effective strategy for prolonging the valley polarization.

Two-dimensional (2D) semiconductors have emerged as promising candidates for various optoelectronic devices especially electroluminescent (EL) devices. However, progress has been hampered by many challenges including metal contacts and injection, transport, and confinement of carriers due to small sizes of materials and the lack of proper double heterostructures. Here, we propose and demonstrate an alternative approach to conventional current injection devices. We take advantage of large exciton binding energies in 2D materials using impact generation of excitons through an alternating electric field, without requiring metal contacts to 2D materials. The conversion efficiency, defined as the ratio of the emitted photons to the preexisting carriers, can reach 16% at room temperature. In addition, we demonstrate the first multiwavelength 2D EL device, simultaneously operating at three wavelengths from red to near-infrared. Our approach provides an alternative to conventional current-based devices and could unleash the great potential of 2D materials for EL devices.

Observing light-by-light scattering at the large hadron collider (LHC) has received quite some attention and it is believed to be a clean and sensitive channel to possible new physics. In this paper, we study the diphoton production at the LHC via the process \({{pp}}\rightarrow {{p}}\gamma \gamma {{p}}\rightarrow {{p}}\gamma \gamma {{p}}\) through graviton exchange in the large extra dimension (LED) model. Typically, when we do the background analysis, we also study the double Pomeron exchange of \(\gamma \gamma \) production. We compare its production in the quark–quark collision mode to the gluon–gluon collision mode and find that contributions from the gluon–gluon collision mode are comparable to the quark–quark one. Our result shows, for extra dimension \(\delta =4\) , with an integrated luminosity \(\mathcal{L} = 200\,\mathrm{fb}^{-1}\) at the 14 TeV LHC, that diphoton production through graviton exchange can probe the LED effects up to the scale \({M}_{S}=5.06 (4.51, 5.11)\,\mathrm{TeV}\) for the forward detector acceptance \(\xi _1 (\xi _2, \xi _3)\) , respectively, where \(0.0015<\xi _1<0.5\) , \(0.1<\xi _2<0.5\) , and \(0.0015<\xi _3<0.15\) .