Zi-En Ooi

Zi-En Ooi


Research Focus & Metrics

Academic Career Length

16Years (2011-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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4 July 2025 in Science Advances
Verified
Journal Article
Open access
SGShuai Guo
Shuai Guo
SPShubham Patel
Shubham Patel
JWJunhui Wang
Junhui Wang
ZYZhen Yu
Zhen Yu
HQHao Qu
Hao Qu
STSwee Ching Tan
Swee Ching Tan
The rapid proliferation of flexible electronics necessitates the development of self-powered energy harvesting systems with continuous power output and sensing signal monitoring. In this study, inspired by transient voltage output (0.2 volts, 4 days) is proposed by replacing movable water droplets with “confined” moisture, harvested and locked by a hygroscopic polymeric gel with high sorption capacity and rapid sorption-desorption kinetics. Further analysis reveals the capacitive behavior of SEHSI, leading to excellent tactile sensing capabilities with high sensitivity and rapid responsiveness, and humidity and temperature response with robust cyclic stability for over 10,000 cycles. Such all-in-one powering and sensing platforms demonstrate promising application potential in self-powered human-machine interactions, including breath status monitoring, contactless motion detection, and braille detection. Our design establishes a promising approach to developing self-powered energy harvesting and sensing systems for human-machine interfaces.

6 April 2023 in ACS Nano
Verified
Journal Article
Closed access
YZYiyu Zhang
Yiyu Zhang
DVDasari Venkatakrishnarao
Dasari Venkatakrishnarao
MBMichel Bosman
Michel Bosman
WFWei Fu
Wei Fu
SDSarthak Das
Sarthak Das
CLChit Siong Lau
Chit Siong Lau

11 September 2020 in ACS Nano
Verified
Journal Article
Closed access
CLChit Siong Lau
Chit Siong Lau
JCJing Yee Chee
Jing Yee Chee
YAYee Sin Ang
Yee Sin Ang
STShi Wun Tong
Shi Wun Tong
LCLiemao Cao
Liemao Cao
KGKuan Eng Johnson Goh
Kuan Eng Johnson Goh

26 August 2021 in Advanced Materials
Verified
Journal Article
Open access
PDF file
CLChit Siong Lau
Chit Siong Lau
JCJing Yee Chee
Jing Yee Chee
LCLiemao Cao
Liemao Cao
ZOZi-En Ooi
Zi-En Ooi
STShi Wun Tong
Shi Wun Tong
KGKuan Eng Johnson Goh
Kuan Eng Johnson Goh
Temperature‐dependent transport measurements are performed on the same set of chemical vapor deposition (CVD)‐grown WS2 single‐ and bilayer devices before and after atomic layer deposition (ALD) of HfO2. This isolates the influence of HfO2 deposition on low‐temperature carrier transport and shows that carrier mobility is not charge impurity limited as commonly thought, but due to another important but commonly overlooked factor: interface roughness. This finding is corroborated by circular dichroic photoluminescence spectroscopy, X‐ray photoemission spectroscopy, cross‐sectional scanning transmission electron microscopy, carrier‐transport modeling, and density functional modeling. Finally, electrostatic gate‐defined quantum confinement is demonstrated using a scalable approach of large‐area CVD‐grown bilayer WS2 and ALD‐grown HfO2. The high dielectric constant and low leakage current enabled by HfO2 allows an estimated quantum dot size as small as 58 nm. The ability to lithographically define increasingly smaller devices is especially important for transition metal dichalcogenides due to their large effective masses, and should pave the way toward their use in quantum information processing applications.

23 May 2022 in ACS Applied Materials & Interfaces
Verified
Journal Article
Closed access
JMJayanta Kumar Mishra
Jayanta Kumar Mishra
NYNatalia Yantara
Natalia Yantara
AKAnil Kanwat
Anil Kanwat
TFTomoki Furuhashi
Tomoki Furuhashi
SRSankaran Ramesh
Sankaran Ramesh
NMNripan Mathews
Nripan Mathews

22 October 2024 in ACS Nano
Verified
Journal Article
Open access
SDSarthak Das
Sarthak Das
DHDing Huang
Ding Huang
IVIvan A. Verzhbitskiy
Ivan A. Verzhbitskiy
ZOZi-En Ooi
Zi-En Ooi
CLChit Siong Lau
Chit Siong Lau
KGKuan Eng Johnson Goh
Kuan Eng Johnson Goh
Excitons are key to the optoelectronic applications of van der Waals semiconductors, with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation remains challenging due to inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic electrical control of valley polarization in charged excitonic states of monolayer tungsten disulfide, achieving up to a 6-fold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the charged exciton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible nonmonotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a resonant interplay between neutral and charged exciton states.