This study is focused on structural characterization of hybrid glasses obtained by consolidation of melting gels. The melting gels were prepared in molar ratios of methyltriethoxysilane (MTES) and dimethyldiethoxysilane (DMDES) of 75%MTES-25%DMDES and 65%MTES-35%DMDES. Following consolidation, the hybrid glasses were characterized using Raman, ²⁹Si and ¹³C Nuclear Magnetic Resonance (NMR) spectroscopies, synchrotron Small Angle X-Ray Scattering (SAXS) and scanning electron microscopy (SEM). Raman spectroscopy revealed the presence of Si–C bonds in the hybrid glasses and 8-membered ring structures in the Si–O–Si network. Qualitative NMR spectroscopy identified the main molecular species, while quantitative NMR data showed that the ratio of trimers (T) to dimers (D) varied between 4.6 and 3.8. Two-dimensional ²⁹Si NMR data were used to identify two distinct types of T³ environments. SAXS data showed that the glasses are homogeneous across the nm to micrometer length scales. The scattering cross section was one thousand times lower than what is expected when phase separation occurs. The SEM images show a uniform surface without defects, in agreement with the SAXS results, which further supports that the hybrid glasses are nonporous.

Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs), highlighting improvements in sensitivity and integration. Vanadium oxide (VO_x) remains predominant, with Al-doped films via atomic layer deposition (ALD) achieving a temperature coefficient of resistance (TCR) of −4.2%/K and significant 1/f noise reduction when combined with single-walled carbon nanotubes (SWCNTs). Silicon-based materials, such as phosphorus-doped hydrogenated amorphous silicon (α-Si:H), exhibit a TCR exceeding −5%/K, while titanium oxide (TiO_x) attains TCR values up to −7.2%/K through ALD and annealing. Emerging materials including GeSn alloys and semiconducting SWCNT networks show promise, with SWCNTs achieving a TCR of −6.5%/K and noise equivalent power (NEP) as low as 1.2 mW/√Hz. Advances in FPA technology feature pixel pitches reduced to 6 μm enabled by vertical nanotube thermal isolation, alongside the 3D heterogeneous integration of single-crystalline Si-based materials with readout circuits, yielding improved fill factors and responsivity. State-of-the-art VO_x-based FPAs demonstrate noise equivalent temperature differences (NETD) below 30 mK and specific detectivity (D*) near 2 × 10¹⁰ cm⋅Hz ^1/2/W. Future advancements will leverage materials-driven innovation (e.g., GeSn/SWCNT composites) and process optimization (e.g., plasma-enhanced ALD) to enable ultra-high-resolution imaging in both civil and military applications. This review underscores the central role of material innovation and system optimization in propelling microbolometer technology toward ultra-high resolution, high sensitivity, high reliability, and broad applicability.