In this study, polyvinyl alcohol (PVA)-mixed DL-alanine (PVA/DL-alanine) polycrystals are fabricated, and their piezoelectric characteristics in the d₃₃ mode are investigated. The d₃₃ piezoelectric coefficients of the PVA/DL-alanine polycrystals are found to increase with an increase in the weight ratio of DL-alanine, and the PVA/DL-alanine polycrystal composed of PVA and DL-alanine in a weight ratio of 1:3 exhibits a d₃₃ of ∼5 pC/N. The piezoelectric characteristics of the PVA/DL-alanine polycrystals are discussed in terms of the crystal structure by employing scanning electron microscopy and X-ray diffraction analyses. To confirm the piezoelectric performance of the polycrystals, the piezoelectric voltages of a piezoelectric device composed of a single layer of ZnO thin film and heterostructured devices consisting of a layer of PVA/DL-alanine polycrystal and a ZnO thin film layer are measured and compared. This study presents PVA/DL-alanine polycrystals as a potential piezoelectric material for bio-friendly piezoelectric-device applications.

This paper presents a highly cost-effective design for an aluminum (Al) foil-based ZnO/Ag/ZnO-stacked piezoelectric nanogenerator (ZAZ-NG) fabricated using radio frequency magnetron sputtering. Both Al foil sheets and a silver (Ag) paste layer are utilized to make a ZAZ-NG composed of an Ag paste layer sandwiched between two zinc oxide (ZnO) layers. The output voltages of the ZAZ-NGs with various ZnO thicknesses are measured for three different bending strains. As a result, the devices could generate a relatively high peak-to-peak output voltage (V_pp) of up to 2.5 V, which is 28 times higher than that of the single ZnO layered device. In addition, the device performance shows a strong dependence on the thickness of the ZnO layer. Moreover, the ZAG-NG device is structurally stable and can be fabricated using cost-effective methods.

In this letter, we present the fabrication and characterization of a zinc oxide (ZnO)-based nanogenerator for piezoelectric micro-energy harvesting by combining thin films of amorphous silicon (a-Si) and ZnO. We utilized the a-Si thin film as an interlayer to assemble several a-Si/ZnO-stacked piezoelectric nanogenerators (SZPNGs) on indium tin oxide (ITO)-coated polyethylene naphthalate substrates. We investigated the influence of the a-Si layer thickness on the output voltages of the SZPNGs and demonstrated the existence of an optimal a-Si thickness for maximizing the output voltage. Overall, the SZPNGs generated higher output voltages than a conventional ZnO-based piezoelectric nanogenerator (ZPNG) lacking an a-Si interlayer, indicating enhanced performance. In particular, the SZPNG based on the optimal a-Si thickness exhibited a sixfold higher output voltage compared with the conventional ZPNG. This improved performance was ascribed to a combination of the Schottky barrier at the ITO/a-Si interface, preventing the screening effect and the relatively high dielectric constant (${\epsilon }_{\mathrm{r}}$ ≈13) of a-Si, minimizing the loss of the piezoelectric potential induced in the ZnO layer. The results herein are expected to assist the development of even more advanced ZnO-based piezoelectric nanogenerators in the future.

In this paper, we present zinc oxide (ZnO)-based flexible harvesting devices employing commercially available, cost-effective thin aluminum (Al) foils as substrates and conductive bottom electrodes. From the device fabrication point of view, Al-foils have a relatively high melting point, allowing for device processing and annealing treatments at elevated temperatures, which flexible plastic substrate materials cannot sustain because of their relatively low melting temperatures. Moreover, Al-foil is a highly cost-effective, commercially available material. In this work, we fabricated and characterized various kinds of multilayered thin-film energy harvesting devices, employing Al-foils in order to verify their device performance. The fabricated devices exhibited peak-to-peak output voltages ranging from 0.025 V to 0.140 V. These results suggest that it is feasible to employ Al-foils to fabricate energy-efficient energy harvesting devices at relatively high temperatures. It is anticipated that with further process optimization and device integration, device performance can be further improved.

Here, we present a study of thermoelectric devices with amorphous silicon/zinc oxide (a-Si/ZnO)-stacked hetero-structures fabricated using both radio frequency magnetron sputtering and rapid thermal annealing techniques. Overall, the Seebeck coefficient (S) and power factor ($S^2\sigma$ , where $\sigma$ is the electrical conductivity) of the a-Si/ZnO-stacked hetero-structures were found to be superior to those of pure a-Si structures. In particular, the Seebeck coefficient and power factor of the a-Si/ZnO (9/8 layers)-stacked hetero-structures were about 1.6 and 23.8 times those of the pure a-Si structures, respectively. These improvements can be attributed to hole blocking by the a-Si/ZnO potential barriers formed at the interface between the ZnO layer with a wide energy bandgap and the a-Si layer with a relatively narrow bandgap. In addition, the a-Si and ZnO materials used in this work are non-toxic, earth-abundant, and cheap, and the fabrication processes were simple and cost-effective, making the hetero-structures suitable for use in non-toxic and biocompatible thermoelectric devices and also for micro-energy harvesting applications.

In this paper, we present a study of various ZnO/SiO₂-stacked thin film structures for flexible micro-energy harvesting devices. Two groups of micro-energy harvesting devices, SiO₂/ZnO/SiO₂ micro-energy generators (SZS-MGs) and ZnO/SiO₂/ZnO micro-energy generators (ZSZ-MGs), were fabricated by stacking both SiO₂ and ZnO thin films, and the resulting devices were characterized. With a particular interest in the fabrication of flexible devices, all the ZnO and SiO₂ thin films were deposited on indium tin oxide (ITO)-coated polyethylene naphthalate (PEN) substrates using a radio frequency (RF) magnetron sputtering technique. The effects of the thickness and/or position of the SiO₂ films on the device performance were investigated by observing the variations of output voltage in comparison with that of a control sample. As a result, compared to the ZnO single-layer device, all the ZSZ-MGs showed much better output voltages, while all the SZS-MG showed only slightly better output voltages. Among the ZSZ-MGs, the highest output voltages were obtained from the ZSZ-MGs where the SiO₂ thin films were deposited using a deposition power of 150 W. Overall, the device performance seems to depend significantly on the position as well as the thickness of the SiO₂ thin films in the ZnO/SiO₂-stacked multilayer structures, in addition to the processing conditions.